Pentacene-based organic field-effect transistors with poly(methyl methacrylate) top-gate insulators fabricated by electrostatic spray deposition

Onojima, Norio; Takahashi, Susumu; Kato, Takamasa

doi:10.1016/j.synthmet.2013.06.008

Cited by 17 publications

(14 citation statements)

References 42 publications

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“…PMMA was dissolved in a mixed solvent of butyl acetate and acetone (1:1 (v/v), 0.1 wt% in concentration). Details of the preparation condition of PMMA solution have been described elsewhere [10]. The solution feed rate, spraying time, spray-nozzle diameter, nozzle-substrate distance, and voltage applied to the nozzle were 0.066 ml/min, 45 min, 120 lm, 10 cm, and 10 kV, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…In the dry condition, almost all of the solvents of PMMA droplets (butyl acetate and acetone) evaporate prior to arriving at the substrate, resulting in very rough morphology. It should be noted, however, that transistor behavior could not be achieved when the PMMA top-gate insulators were prepared in the ESD process that is closer to a wet condition because the residual solvents dissolved the underlying active layer [10]. From a SEM image of PMMA particles deposited on the SiO 2 (Fig.…”

Section: Methodsmentioning

confidence: 99%

“…In our previous work, we fabricated pentacene-based OFETs with PMMA top-gate insulators (channel length of 5 lm) prepared by electrostatic spray deposition (ESD) [10]. Top-gate devices have many advantages over bottom-gate ones.…”

Section: Introductionmentioning

confidence: 99%

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Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition

Onojima

Takahashi

Saito

2015

Organic Electronics

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition

Onojima

Takahashi

Saito

2015

Organic Electronics

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“…6 OFETs with top-gate architecture have several advantages over bottomgate devices, such as better charge carrier injection and easier gate line design. 7 However, organic inversion transistors in top-gate configuration have up to now not been realized.…”

Section: Top-gate Organic Depletion and Inversion Transistors With Domentioning

confidence: 99%

“…Besides, for the transistors with intrinsic pentacene channel, the mobility is averaged to be 0.09 cm 2 V À1 s À1 , which is among the highest mobility values reported for top-gate pentacene-based organic transistors. 7,13,14 For the depletion transistors with p-doped pentacene channel, the average mobility is 0.05 cm 2 V À1 s À1 , whereas for the inversion transistors with n-doped pentacene channel, the mobility is 0.03 cm 2 V À1 s À1 . The comparatively small mobility of doped-channel transistors is related to the structural phase transition of the pentacene film from crystalline to amorphous at increased doping concentration.…”

Section: Top-gate Organic Depletion and Inversion Transistors With Domentioning

confidence: 99%

Top-gate organic depletion and inversion transistors with doped channel and injection contact

Liu

Kasemann

Leo

2015

Applied Physics Letters

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Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

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Versatile Organic Transistors by Solution Processing

2015

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A selection of the latest developments in organic electronic materials and organic field-effect transistor (OFET) devices is reviewed here with an emphasis on the synthetic and manufacturing versatility, ease of processing, and low cost offered by solution processability. At the heart of these benefits is the nature of the weak van der Waals intermolecular interactions inherent to organic compounds. This allows processability with a relatively small amount of energy investment. Material solubility, in particular, creates unique pathways for film fabrication and the design of new device architectures, while presenting new manufacturing challenges to explore. In this review we provide a chronological presentation of the important developments in the solution-deposited organic small-molecule semiconductor, dielectric, and electrode materials used in OFETs, making specific note of current benchmarks. Organic device architectures and fabrication methods that are characterized by reduced complexity and ease of implementation are discussed.

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Pentacene-based organic field-effect transistors with poly(methyl methacrylate) top-gate insulators fabricated by electrostatic spray deposition

Cited by 17 publications

References 42 publications

Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition

Organic field-effect transistors based on single-crystalline active layer and top-gate insulator consistently fabricated by electrostatic spray deposition

Top-gate organic depletion and inversion transistors with doped channel and injection contact

Versatile Organic Transistors by Solution Processing

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