Penurunan Noise Figure Performance (Fn) Pada Heterojunction Bipolar Transistor Si/Si 1-X Gex Berdasarkan Pengaturan Stripe Emitter Area (Ae) Dan Fraction Mole (X)

Alamsyah, Tossin; Hartanto, Djoko; Puspawati, N R

doi:10.7454/mss.v14i2.734

MSS

2011

DOI: 10.7454/mss.v14i2.734

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Penurunan Noise Figure Performance (Fn) Pada Heterojunction Bipolar Transistor Si/Si 1-X Gex Berdasarkan Pengaturan Stripe Emitter Area (Ae) Dan Fraction Mole (X)

Tossin Alamsyah¹,

Djoko Hartanto²,

N R Puspawati³

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Penurunan Noise Figure Performance (Fn) Pada Heterojunction Bipolar Transistor Si/Si 1-X Gex Berdasarkan Pengaturan Stripe Emitter Area (Ae) Dan Fraction Mole (X)

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