Per-unit-length inductance matrix computations using modified partial inductances

“…1, in the case t = h = a = w 1 = w 2 = d 1 = d 2 = 50 µm. L' DC was computed using an exact formula implementing modified partial inductances [6]. All entries of L' DC are equivalent to (µ 0 ln b) /(2 ) as b , so that, in Fig.…”

Section: Discussion Of Some Model Parametersmentioning

confidence: 99%

A discussion of an analytical per-unit-length impedance matrix model

Broyde¹,

Clavelier²,

Zutter

et al. 2012

2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems

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“…The integral formulation is well known [11,12,[24][25][26][27][28][45][46][47] and is derived by assuming sinusoidal steady-state, and then applying the magnetoquasistatic assumption that the displacement current, jωεE, is negligible. In the case of N straight parallel conductors with length l, conductivity σ i (i = 1, 2, .…”

Section: Integral Equationmentioning

confidence: 99%

“…The analytical formulae are possible for round wires and tubes [11][12][13][14][15], very long and thin (tapes or strips) rectangular busbars [7,[16][17][18][19][20][21][22][23] or for DC cases (current densities are assumed to be uniform) [16][17][18][24][25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Numerical Method of Computing Impedances in Shielded and Unshielded Three-Phase Rectangular Busbar Systems

Piątek¹,

Baron²,

Jabłoński³

et al. 2013

PIER B

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Abstract-In this paper, a new numerical method of calculating rectangular busbar impedance is proposed. This method is based on integral equation method and partial inductance theory. In particular, impedances of shielded and unshielded three-phase systems with rectangular phase and neutral busbars, conductive enclosure, and use of the method are described. Results for resistances and reactances for these systems of multiple rectangular conductors have been obtained, and skin and proximity effects have also been taken into consideration. The impact of the enclosure on impedances is also presented. Finally, two applications to three-phase shielded and unshielded systems busbars are described. The validation of the proposed method is carried out through FEM and laboratory measurements, and a reasonable level of accuracy is demonstrated.

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“…A correct knowledge of this frequency behavior (together with that of the resistance) is necessary to maintain causality in time-domain computations [10]- [12]. We restrict here the computations to the partial inductance of a single conductor, but for real situations, the complete current path must be taken into account, including the return path and mutual coupling effects [1], [2], [7], [13]- [15].…”

Section: Introductionmentioning

confidence: 99%

Difference Between the Partial Self-Inductance at DC and at HF

Smedt¹

2015

IEEE Trans. Electromagn. Compat.

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The difference of the partial self-inductance of a single conductor is determined between two extremes of the frequency range: at dc and at HF (infinite frequency). They are first calculated separately for a finite large length. Both contain the same logarithm(length) singularity, but this disappears in their difference, which only involves the logarithm of the ratio of the equivalent radius and the geometrical mean distance. We have applied this to some common conductor cross sections: circle, ellipse, rectangle, and diamond and to the limit of zero thickness of these cross sections. In the latter case, a general expression is derived.

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Per-unit-length inductance matrix computations using modified partial inductances

Cited by 7 publications

References 2 publications

A discussion of an analytical per-unit-length impedance matrix model

A discussion of an analytical per-unit-length impedance matrix model

Numerical Method of Computing Impedances in Shielded and Unshielded Three-Phase Rectangular Busbar Systems

Difference Between the Partial Self-Inductance at DC and at HF

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