Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder

Nenashev, A. V.; Gebhard, Florian; Meerholz, Klaus; Baranovskiǐ, S. D.

doi:10.1002/9781119715641.ch6

Cited by 1 publication

(1 citation statement)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This extrinsic mobility model involves a complex interaction between temperature and carrier concentration, with stronger carrier concentration dependence at lower temperature. Transport governed by the percolation mechanism has been widely associated with extended-state conduction in IGZO (9)(10)(11), however the electron mobility is expressly dependent on the Fermi level.…”

Section: Back-channel Interface Trap Acceptor States (Exponential)mentioning

confidence: 99%

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Kabir¹,

Powell²,

Manley³

et al. 2022

ECS Trans.

View full text Add to dashboard Cite

There is wide variation in the interpretation of the interaction and/or independence of channel mobility and charge trapping in IGZO TFTs. Electrical measurements reveal temperature-dependent behavior that is not explained by existing TCAD models employed for defect states and carrier mobility. An IGZO TFT device model has been recently developed using Silvaco Atlas, which accounts for the role of donor-like oxygen vacancy defects, acceptor-like BTS, and acceptor-like interface traps, thus properly regulating the amount of free channel charge. The channel mobility is defined as only a function of temperature, and reflects a thermally-activated diffusive mobility with a distinct activation energy Ea = 40 meV. This thermally activated process is clearly intrinsic, as it is constant over all bias conditions and is not dependent on the steady-state trapped charge level. The model demonstrates a remarkable match to transfer characteristics measured at T = 150 K to room temperature.

show abstract

Section: Back-channel Interface Trap Acceptor States (Exponential)mentioning

confidence: 99%

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Kabir¹,

Powell²,

Manley³

et al. 2022

ECS Trans.

View full text Add to dashboard Cite

show abstract

Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder

Cited by 1 publication

References 42 publications

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs

Contact Info

Product

Resources

About