Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

Tung, Chih Hang; Pey, K. L.; Tang, Lei; Radhakrishnan, M.; Lin, W.H.; Palumbo, F.; Lombardo, S.

doi:10.1063/1.1611649

Cited by 95 publications

(71 citation statements)

References 8 publications

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“…15 The similar phenomenon of Si atoms migration from the substrate to the gate electrode during the dielectric breakdown of a MOSFET was observed. 35 There are no major changes in 115 In + , 16 O + , 90 Zr + , and 28 Si 16 O + signal distributions before and after the V g stress in the N 2 PDA samples. The intensity of 28 Si + in the ITO film of the O 2 PDA SSI-LED is 15 times larger than that in the original MOS capacitor.…”

Section: Resultsmentioning

confidence: 99%

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Zhang

Kuo

2017

ECS J. Solid State Sci. Technol.

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Electrical and optical properties of solid state incandescent light emitting devices made from MOS capacitors of the same Zr-doped HfO 2 high-k film but two different post deposition annealing atmospheres have been investigated. Compared with the N 2 annealed sample, the O 2 annealed capacitor has a thicker and more SiO x -rich interface layer, lower defect densities, a larger dielectric breakdown strength, and a lower leakage current. Light emitted from the solid-state incandescent light emitting device made from the O 2 annealed capacitor has a high intensity and slightly more blue component than that made from the N 2 annealed capacitor due to the higher temperature of the conductive path. The former contains more Si and O elements in conductive paths than the latter does, which can be used to explain the difference in their electrical and optical characteristics. The post deposition atmosphere affected the original high-k stack's material and physical properties, which influences the formation and material composition of conductive paths and eventually the light emission characteristics. If incandescent and fluorescent light lamps are replaced with solidstate light emitting devices (LEDs), the energy consumption from lighting in the United States can be saved by about 38%.1 LEDs are usually made of direct-bandgap semiconductor materials prepared in the p-n junction or quantum well (QW) structure.2,3 They require the growth of high quality compound semiconductor epitaxy layers on single crystal substrates. The process is expensive and tedious. 1-3The light emission principle is the electron-hole or exciton-exciton recombination. The energy of the emitted light is equivalent to that of the bandgap energy of the semiconductor material.1-3 Therefore, the broad-band light cannot be emitted from a single LED. The white light can be generated using 3 different kinds of LEDs, i.e., red, green, and blue light emitting, or a blue LED in combination with a phosphor layer. 4,5 CdSe/ZnS core-shell nanocrystals have been used to convert the blue/UV light into the green/red light, which is also a method of generating the white light. 6,7 However, the size of the nanocrystal has to be tightly controlled to emit a specific color, which is difficult to achieve. 7 The semiconductor based LED is often subject to the "droop" failure mechanism that shortens the lifetime. 8 It is desirable to have a LED that emits the broad band white light from a single device and can be fabricated with the IC-compatible process with a long lifetime. Recently, Kuo's group reported a new type of solid-state incandescent LED (SSI-LED) that emitted the warm white light similar to that of the incandescent bulb.9-16 The light emitting principle of the SSI-LED is the thermal excitation of the nano-sized conductive path from the passage of a current. [9][10][11][12][13][14][15][16] It is made from a MOS capacitor composed of an amorphous high-k dielectric thin film, such as Zr-doped HfO 2 (ZrHfO), HfO x , or WO x , on a p-type Si wafer.9-16 These high-k...

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Section: Resultsmentioning

confidence: 99%

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Zhang

Kuo

2017

ECS J. Solid State Sci. Technol.

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“…For softer breakdowns there is not enough power dissipation available during the breakdown transient to initiate dielectric-breakdowninduced epitaxy (DBIE) [19]. In this case a set of acceleration parameters different from those use to predict dielectric wear-out is required.…”

Section: Discussionmentioning

confidence: 99%

Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

Suehle¹,

Zhu

Chen

et al. 2005

Microelectronics Reliability

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“…At the boundaries between different chemical compositions, atoms diffuse from one part to another. The interface mixing sometimes causes detrimental effect to the MOS device with dielectric failure or forms barrier to prevent interdiffusion [1,2]. The excessive energy in the diffused interface will enlarge the bandgap and hence reduce the dielectric constant locally [3].…”

Section: Hetero-junction Interfacesmentioning

confidence: 98%

Compounds and Nanocomposites: Hetero-Coordination

Sun

2014

Springer Series in Chemical Physics

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Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

Cited by 95 publications

References 8 publications

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

Compounds and Nanocomposites: Hetero-Coordination

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