2007
DOI: 10.1109/smicnd.2007.4519789
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Percolation Phenomena in Silicon - Based Nanocrystalline Systems

Abstract: The present paper analyzes the appearance of voltage percolation thresholds in the current -voltage characteristics measured on silicon-based nanocrystalline systems that present random space distribution of the nanocrystallites. This percolation phenomenon is explained on the basis of the probability of tunneling under applied bias and is related to the samples microstructure.

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Cited by 2 publications
(1 citation statement)
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“…The nonohmic behavior in the IV characteristics of a single Ni-Si NW is in contrast to the Ni-Si NW network shown in Figure 3 b. This difference in the IV characteristics of these two devices can be explained by the percolation theory, which predicts a threshold areal NW density for the onset of ohmic characteristics from nonohmic behavior for metal/semiconductor shell/core nanostructures [ 29 , 30 ]. The single Ni-Si NW-based device was heat-treated by rapid thermal annealing (RTA) process at 300°C for 20 min to reduce contact resistance.…”
Section: Resultsmentioning
confidence: 99%
“…The nonohmic behavior in the IV characteristics of a single Ni-Si NW is in contrast to the Ni-Si NW network shown in Figure 3 b. This difference in the IV characteristics of these two devices can be explained by the percolation theory, which predicts a threshold areal NW density for the onset of ohmic characteristics from nonohmic behavior for metal/semiconductor shell/core nanostructures [ 29 , 30 ]. The single Ni-Si NW-based device was heat-treated by rapid thermal annealing (RTA) process at 300°C for 20 min to reduce contact resistance.…”
Section: Resultsmentioning
confidence: 99%