Perfect “fractal” behavior in XRD pattern of Ga(As,P) Fibonacci lattice grown by atomic layer epitaxy

Isshiki, Hideo; Lee, J.S; Aoyagi, Yoshinobu; Sugano, Takuo

doi:10.1016/s0022-0248(00)00645-x

Journal of Crystal Growth

2000

DOI: 10.1016/s0022-0248(00)00645-x

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Perfect “fractal” behavior in XRD pattern of Ga(As,P) Fibonacci lattice grown by atomic layer epitaxy

Hideo Isshiki

J.S Lee

Yoshinobu Aoyagi

et al.

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“…This system should demonstrate non-conventional electron and phonon states showing energy spectra with a high fragmentation, or a fractal behavior. These have been achieved by the deposition of GaAs/AlAs Fibonacci superlattices (FSLs) grown by molecular beam epitaxy (MBE) [6,7] and Ga(As, P) FSLs by means of atomic layer epitaxy (ALE) by metalorganic vapor phase epitaxy (MOVPE) [8]. To date, however, there have been few reports concerning with FSLs arrangements in nitride-based material systems.…”

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Characterization of InGaN/GaN Fibonacci superlattices grown by two‐flow metalorganic vapor phase epitaxy

Kusakabe

Ohkawa

2003

phys. stat. sol. (c)

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A quasiperiodic system of InGaN/GaN superlattices, grown by two-flow metalorganic vapor phase epitaxy on sapphire substrates, was investgated for the first time. The superlattice structure consisted of an alternative stack of InGaN and GaN thin films to form a Fibonacci sequence. In the X-ray ω-2θ (0002) spectrum, many diffracted satellite peaks from Fibonacci superlattices were observed, but not Bragg-like ones, which resulted from the no-periodicity feature of Fibonacci superlattices. It was found that satellite peaks are characterized as a fractal behavior. And it was considered that moderately large interface fractuation in the sequential deposition of the superlattice does not appear to disturbe the quasiperiodic order of Fibonaci InGaN/GaN superlattices.1 Introduction Physical properties of quasiperiodic systems have been studied intensively [1][2][3][4][5][6][7][8][9]. First identifications of a quasicrystal structure were demonstrated on the basis of electron diffraction data [1][2][3]. Subsequent investigation by X-ray scattering techniques with much higher resolution was carried out to index a quasicrystalline pattern exhibiting icosahedral symmetry [4]. However, some diffraction peaks were broadened while others remained sharp. These findings have been explained as evidence of a random packing of units having icosahedral symmetry [5].The Fibonacci system, linear lattice constructed recursively, is the one-dimensional version of the quasicrystals. It has been the subject of considerable theoretical study as a model of quasicrystals. On the other hand, it is of interest to study experimentally a model system in which quasicrystalline order is established. This system should demonstrate non-conventional electron and phonon states showing energy spectra with a high fragmentation, or a fractal behavior. These have been achieved by the deposition of GaAs/AlAs Fibonacci superlattices (FSLs) grown by molecular beam epitaxy (MBE) [6,7] and Ga(As, P) FSLs by means of atomic layer epitaxy (ALE) by metalorganic vapor phase epitaxy (MOVPE) [8]. To date, however, there have been few reports concerning with FSLs arrangements in nitride-based material systems.In this paper, to the best of our knowledge, the first report on the fabrication of InGaN/GaN FSLs structures and their characterization is presented. In this system, it can be expected as a novel functional material based on the fractal concept [6][7][8][9]. It is considered that achievement of abrupt interfaces of InGaN/GaN is an important issue by controlling growth conditions in MOVPE. So, it is good strategy to fabricate an ideal structure of FSLs by optimized MOVPE growth conditions of InGaN/GaN FSLs.

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Characterization of InGaN/GaN Fibonacci superlattices grown by two‐flow metalorganic vapor phase epitaxy

Kusakabe

Ohkawa

2003

phys. stat. sol. (c)

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Wavefunction engineering using Mandelbrot, multicorn, and Koch's snowflake fractal quantum rings to control the persistent current

Tehrani,

Solaimani,

Fathollahi

2024

Chaos, Solitons & Fractals

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Perfect “fractal” behavior in XRD pattern of Ga(As,P) Fibonacci lattice grown by atomic layer epitaxy

Cited by 2 publications

References 5 publications

Characterization of InGaN/GaN Fibonacci superlattices grown by two‐flow metalorganic vapor phase epitaxy

Characterization of InGaN/GaN Fibonacci superlattices grown by two‐flow metalorganic vapor phase epitaxy

Wavefunction engineering using Mandelbrot, multicorn, and Koch's snowflake fractal quantum rings to control the persistent current

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