Perfectly (001)‐ and (111)‐Oriented (Ba,Sr)TiO3 Thin Films Sputtered on Pt/TiOx/SiO2/Si Without Buffer Layers

Yang, Lihui; Wang, Genshui; Dong, Xianlin; Rémiens, Denis

doi:10.1111/j.1551-2916.2009.03427.x

Cited by 14 publications

(16 citation statements)

References 16 publications

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“…According to literature, the variation in permittivity and losses with and without addition of a buffer layer can be explained by multiple reasons. Firstly (111) orientation of the film contributes significantly to the increase in BST films permittivity . Moreover, parameters such as the presence of crystalline defects or chemical compatibility between the electrodes and the film change the quality of the interfaces.…”

Section: Resultsmentioning

confidence: 99%

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiO_x/Ba_xSr_1−xTiO₃ Structures

et al. 2015

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Ba(Sr,Ti)O 3 material presents a remarkable property that lies in the possibility to change the permittivity by applying a DC electric field, i.e., BST is a tunable material. That makes BST a very interesting material for the development of reconfigurable devices in microelectronics. In this study, we focus our work on Ba(Sr,Ti)O 3 with Ba/Sr = 30/70, the films are deposited by radio-frequency magnetron sputtering on Al 2 O 3 (0001). A buffer layer of TiO x is used to control the film orientation. The influence of this buffer layer on the dielectric properties, the interfaces quality with respect to the film thickness, and the temperature is analyzed. An increase of 30% of the relative permittivity was measured and a tunability of 50% was attained at 300 KV/cm. The dielectric measurements on BST/ TiO x as a function of the temperature show a shift of the Curie temperature (T c = -40°C) in comparison to BST without TiO x layer (T c = -80°C). We demonstrate that the Curie temperature does not correspond to the maximum permittivity. The important stress measured on the films (930 MPa) could explain this behavior.

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Section: Resultsmentioning

confidence: 99%

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiO_x/Ba_xSr_1−xTiO₃ Structures

et al. 2015

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“…Without Tio x , the BsT film orientation follows the orientation of the substrate and we observe a poor crystallization. If we compare the results with those obtained on Pt metalized silicon [16], the crystalline quality of sapphire and the film composition at the interface permit a thinner buffer layer to be used here. The final structure fabricated and characterized in this work is (0001) al 2 o 3 / Tio x (8 Å)/ (111)-oriented BsT (350 nm).…”

Section: Introductionmentioning

confidence: 96%

“…In this study, (111)-oriented BsT films were obtained by employing an ultrathin (9-Å-thick) Tin layer as a template on al 2 o 3 (0001) substrates. We have also published papers on the BsT film orientation effects [16], [17]; two approaches have been studied: the introduction of o 2 during the deposition and the use of a Tio x buffer layer. In both cases, we have used si/ sio 2 /Tio x /Pt substrates.…”

Section: Introductionmentioning

confidence: 99%

Broadband Dielectric Characterization of Sapphire/TiO_x/Ba_0.3Sr_0.7TiO₃ (111)-Oriented Thin Films for the Realization of a Tunable Interdigitated Capacitor

Ghalem

Ponchel

Rémiens

et al. 2013

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiO x /Ba 0.3 Sr 0.7 TiO 3 (BST) (111)-oriented thin films. To that end, Ba x Sr 1−x TiO 3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiO x buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

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“…The most important intrinsic material properties to ensure success for these applications are the loss and the tunability. Undoped BST films present high tunability especially for preferred (111) orientation or epitaxial films 3 . Typically pure BST thin films offer tunability upward of 50% at bias voltages of <10 V, which is compatible with the voltage requirements of present semiconductor‐based systems 4 .…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties at Microwaves Frequencies of (Ni, Ti, La, Mg)-Doped Ba0.3Sr0.7TiO3 Thin Films Deposited onHigh-Resistivity Silicon Substrates

Ponchel¹,

Rémiens²,

Midy³

et al. 2011

Journal of the American Ceramic Society

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Pure and doped Ba0.3Sr0.7TiO3 thin films are deposited by radio frequency magnetron sputtering with the in situ process on high‐resistivity silicon substrates. We have studied four dopants: La, Ti, Mg, and Ni with different concentrations from 1 to 5 mol%. Permittivity, dielectrics losses, and tunability are determined up to 60 GHz using a coplanar waveguide. This study highlights the difficulty to improve these electrical properties simultaneously, in particular the loss tangent and the tunability. The best improvement is obtained in case of 5 mol% La for which the losses are in the order of 7.4%, the tunability and the figure of merite are around 29% and 3.9%, respectively, at 60 GHz.

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Perfectly (001)‐ and (111)‐Oriented (Ba,Sr)TiO₃ Thin Films Sputtered on Pt/TiO_x/SiO₂/Si Without Buffer Layers

Cited by 14 publications

References 16 publications

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiO_x/Ba_xSr_1−xTiO₃ Structures

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiO_x/Ba_xSr_1−xTiO₃ Structures

Broadband Dielectric Characterization of Sapphire/TiO_x/Ba_0.3Sr_0.7TiO₃ (111)-Oriented Thin Films for the Realization of a Tunable Interdigitated Capacitor

Dielectric Properties at Microwaves Frequencies of (Ni, Ti, La, Mg)-Doped Ba0.3Sr0.7TiO3 Thin Films Deposited onHigh-Resistivity Silicon Substrates

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Perfectly (001)‐ and (111)‐Oriented (Ba,Sr)TiO3 Thin Films Sputtered on Pt/TiOx/SiO2/Si Without Buffer Layers

Cited by 14 publications

References 16 publications

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiOx/BaxSr1−xTiO3 Structures

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiOx/BaxSr1−xTiO3 Structures

Broadband Dielectric Characterization of Sapphire/TiOx/Ba0.3Sr0.7TiO3 (111)-Oriented Thin Films for the Realization of a Tunable Interdigitated Capacitor

Dielectric Properties at Microwaves Frequencies of (Ni, Ti, La, Mg)-Doped Ba0.3Sr0.7TiO3 Thin Films Deposited onHigh-Resistivity Silicon Substrates

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Perfectly (001)‐ and (111)‐Oriented (Ba,Sr)TiO₃ Thin Films Sputtered on Pt/TiO_x/SiO₂/Si Without Buffer Layers

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiO_x/Ba_xSr_1−xTiO₃ Structures

Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiO_x/Ba_xSr_1−xTiO₃ Structures

Broadband Dielectric Characterization of Sapphire/TiO_x/Ba_0.3Sr_0.7TiO₃ (111)-Oriented Thin Films for the Realization of a Tunable Interdigitated Capacitor