Abstract:The performance of a fabricated CMOS line sensor based on the lateral drift-field photodiode (LDPD)1 concept is described. A new pixel structure was designed to decrease the charge transfer time across the photoactive area. Synopsys TCAD simulations were performed to design a proper intrinsic lateral drift-field within the pixel. The line sensor was fabricated in the 0.35 µm CMOS technology, and further characterized using a tailored photon-transfer method2 and the EMVA 1288 standard3. The basic parameters suc… Show more
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