Performance analysis of charge plasma based dual electrode tunnel FET

Anand, Sunny; Amin, S. Intekhab; Sarin, R. K.

doi:10.1088/1674-4926/37/5/054003

Cited by 40 publications

(21 citation statements)

References 19 publications

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“…Lateral tunnelling in the nanotube device leads to better performance because of the dependency of band‐to‐band tunnelling, the mechanism through which the current flows in TFETs, on the junction cross‐sectional area [15]. The core consists of silicon dioxide (SiO 2 ) with a platinum electrode whose work function is equal to 5.93 eV and a hafnium electrode whose work function is 3.9 eV to form the source and drain, respectively, because the device is dopingless [16]. Application of the charge plasma technique allows the elimination of the doping techniques implemented at high temperatures [17].…”

Section: Device Structuresmentioning

confidence: 99%

Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

Apoorva

Kumar

Amin

et al. 2021

IET Circuits, Devices & Systems

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Investigation and analysis of a ferroelectric material-based dopingless nanotube tunnel field-effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device. Landau-Khalatnikov equations are used in deriving the parameter values of the ferroelectric material to ensure accurate results. The nanotube structure of the tunnel field-effect transistor allows for better electrostatic control owing to its gate-all-around structure. Incorporation of negative capacitance further reduces the voltage supply requirement and power consumption of the structure while simultaneously improving switching. In addition, the device is studied for varying thicknesses of the dielectric PZT material. The threshold voltage of the device under study was calculated as 0.281 V, and the average subthreshold slope of the device was reduced to 18.271 mV/decade, far below the thermionic limit of 60 mV/decade. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Device Structuresmentioning

confidence: 99%

Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

Apoorva

Kumar

Amin

et al. 2021

IET Circuits, Devices & Systems

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“…B. V. Chandan et al proposed Junction less based dielectric modulated electrically doped TFET (JL-DM-ED-TFET) biosensor for label-free detection of biomolecules [12]. The utilization of a control gate and polarity gate with suitable work function [43] over the intrinsic silicon avoids the need for physical doping and form the p-i-n structure. The cavity is created under the control gate for the immobilization of biomolecules to enable dielectric modulation.…”

Section: Junction Less and Doping Less Tfet Based Biosensorsmentioning

confidence: 99%

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity

Reddy¹,

Panda²

2020

Silicon

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In this fast-growing technological world biosensors become more substantial in human life and the extensive use of biosensors creates enormous research interest among researchers to define different approaches to detect biomolecules. The FET based biosensors have gained a lot of attention among all because of its high detection ability, low power, low cost, label-free detection of biomolecules, and CMOS compatible on-chip integration. The sensitivity of the biosensor inversely proportional to device size since they detect low concentration yields quick response time. Although FET based biosensor is having a lot of advantages among others but the short channel effects (SCE's) and the theoretical limitation on the subthreshold swing (SS > 60mv/dec) of the FET leads to restrict device sensitivity and also have higher power dissipation due to the thermionic emission of electrons. To avoid these problems researchers focus shifts to the new technology FET based biosensors i.e. TFET based biosensors which are having low power and superior characteristics due to Band to band tunneling of carrier and steep subthreshold swing. This manuscript describes the full-fledged detail about the TFET based biosensors right from unfolding the device evaluation to biosensor application which includes qualitative and quantitative parameters analysis study like sensitivity parameters and different factors affecting the sensitivity by comparing different structures and the mechanisms involved. The manuscript also describes a brief review of different sensitivity parameters and improvement techniques. This manuscript will give researchers a brief idea for developing for the future generation TFET biosensors with better performance and ease of fabrication.

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“…In addition, the total current density of the H-DLTFET, according to the on-state, was researched in order to understand the operating mechanism, as shown in Figure 4d. The electrons from the source region and the channel bottom region could be easily absorbed by the drain region to form the tunneling leakage current [28,29]. As an important parameter, the transconductance (g m ) was used to evaluate the simulation performance of the device, which was defined as the first derivative of the transfer characteristic [27], and the value of g m is provided by Equation 1:…”

Section: The Operating Mechanism Of H-dltfetsmentioning

confidence: 99%

“…In addition, the total current density of the H-DLTFET, according to the on-state, was researched in order to understand the operating mechanism, as shown in Figure 4d. The electrons from the source region and the channel bottom region could be easily absorbed by the drain region to form the tunneling leakage current [28,29]. Figure 5 shows the on-state energy band of the DLTFET and the H-DLTFET when they were in different locations.…”

Section: The Operating Mechanism Of H-dltfetsmentioning

confidence: 99%

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

et al. 2019

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In this paper, a novel doping-less tunneling field-effect transistor with Si0.6Ge0.4 heterojunction (H-DLTFET) is proposed using TCAD simulation. Unlike conventional doping-less tunneling field-effect transistors (DLTFETs), in H-DLTFETs, germanium and Si0.6Ge0.4 are used as source and channel materials, respectively, to provide higher carrier mobility and smaller tunneling barrier width. The energy band and charge carrier tunneling efficiency of the tunneling junction become steeper and higher as a result of the Si0.6Ge0.4 heterojunction. In addition, the effects of the source work function, gate oxide dielectric thickness, and germanium content on the performance of the H-DLTFET are analyzed systematically, and the below optimal device parameters are obtained. The simulation results show that the performance parameters of the H-DLTFET, such as the on-state current, on/off current ratio, output current, subthreshold swing, total gate capacitance, cutoff frequency, and gain bandwidth (GBW) product when Vd = 1 V and Vg = 2 V, are better than those of conventional silicon-based DLTFETs. Therefore, the H-DLTFET has better potential for use in ultra-low power devices.

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Performance analysis of charge plasma based dual electrode tunnel FET

Cited by 40 publications

References 19 publications

Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

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