Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer

Abstract

In this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to improve the DC and RF parameters of gallium nitride-based high electron mobility transistors (HEMT). To explore the characteristics, both graded and non-graded double heterojunction high electron mobility transistor (DH-HEMT) structures are optimized using SILVACO-ATLAS physical simulator. Enhanced DC and RF parameters have been observed in the optimized graded DH-HEMT. In this paper, we have also studied the development of the quantum wells at the AlGaN/GaN interfaces due to the conduction band discontinuity in both structures.

Joint Mechanism (Tunneling and Thermionic Emission) for Improved Performance of a Dielectric Modulated Transistor Biosensor

“…18 The combination of mechanisms (tunnelling and thermionic emission) enhances the DC, RF characteristics and ON state current drastically that has been used for designing a higher sensitivity label-free biosensor. 19 The proposal gives a rigorous comparative analysis between pure tunnelling and combined mechanism in terms of DC/RF parameter sensitivity of biosensors. Also, gate workfunction engineering is implemented and its effects are analyzed over the biosensor characteristics.…”