Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime

Abstract

In this work, an n-type gate all around (GAA) MOSFET with various gate lengths from 90 to 12 nm is considered for simulation. The temperature dependent simulation is carried out in order to investigate the electrical characteristics extensively. The temperature range used in this work varies from 6 to 700 K, including cryogenic temperature, and the behavior of the GAA MOSFET as a next generation semiconductor device for quantum computing systems is investigated. The implementation of a hardware-based quantum processor needs the integration of a CMOS controller and read-out interface circuit that will operate at cryogenic temperature (6 K). In this work, we investigate the critical behavior of the drain current at cryogenic temperature and normal room temperature. А comparative analysis is carried out to study the effect of temperature on the device performance. Тhe proposed device at cryogenic temperature can work properly and become a promising device for future quantum computing systems.