Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation

Bhattacherjee, S.; Biswas, Abhijit

doi:10.1016/j.microrel.2011.02.004

Cited by 6 publications

(1 citation statement)

References 37 publications

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“…Furthermore, JL-FET devices also have the advantages of a simplified process, high mobility, and low gate capacitances as compared to the INV devices [8][9][10]. Recently, double gate [11] and body-tied tri-gate [12] Ge JL-FET pMOSFETs have been demonstrated on GOI substrates and bulk Si, respectively. However for high doped JL-FET, the carriers will undergo serious impurity scattering, and drive current will be largely degraded accordingly [8].…”

Section: Introductionmentioning

confidence: 99%

Two dimensional hole gas (2DHG) germanium junctionless P-FinFETs without impurity scattering achieved by modulation doping in channel

Chu

Chen

et al. 2017

Semicond. Sci. Technol.

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For the junctionless field-effect transistors (JL-FETs), there is a big concern that the high channel doping degrades carrier mobility by ionized impurity scattering mechanism. In this work, a sandwiched Ge/GeSi/Ge layer structure is proposed to be used as JL-FinFET channel, and only the middle GeSi layer is modulation doped by B atoms. In this structure, two dimensional hole gas (2DHG) forms in the top and bottom Ge channel layers, and is separated from B dopant impurity in the middle GeSi layer. Due to high hole mobility of 2DHG, the device exhibits an enhanced on-state current. The finished 2DHG Ge JL-FinFET shows a 6× current enhancement as compared to controlled Ge JL-FinFET with a uniformly B-doped Ge channel.

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