Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter

Gutiérrez, A.; Marcault, Emmanuel; Alonso, Corinne; Trémouilles, David

doi:10.23919/epe20ecceeurope43536.2020.9215645

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…This type of device is known also as depletion mode (d-mode) transistors. However, they are not preferred by the industry due to their startup problems and short circuit risk in case of the driver failure [7], [10].…”

Section: Normally-off Transistorsmentioning

confidence: 99%

“…Since then, WBG switching devices have been introduced to the market, which present superior conduction and switching characteristics compared to Silicon devices. These new devices have made possible more efficient converters with higher power densities [1], [7], [8]. Silicon Carbide (SiC) MOSFETs are mature enough to displace Silicon IGBTs and diodes in some applications offering higher efficiency levels and standard gate terminal requirements.…”

Section: Introductionmentioning

confidence: 99%

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Gallium Nitride Power Devices: A State of the Art Review

Udabe,

Baraia-Etxaburu,

Diez

2023

IEEE Access

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Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities. In contrast to Silicon Carbide (SiC) devices, Gallium Nitride (GaN) devices are several steps behind in terms of development, standardization and achievable power levels. This makes the use and integration of these devices in real power applications more challenging. Commercially available current Power GaN devices are based on lateral normally ON HEMT transistors. In order to get normally OFF power transistors, two transistor structures have been proposed: enhancement mode (e-mode) and hybrid transistors. Current E-mode transistors present a low gate threshold voltage which could lead to crosstalk problems. In contrast, hybrid transistors have higher gate threshold voltages, however, the use of a Silicon MOSFET in their structure limits their performance. The lack of a standard power GaN device makes it difficult the adoption of these promising devices by the industry. Thus, in order to facilitate the adoption of these power GaN devices, this paper presents a State of the Art of power Gallium Nitride devices focusing on their structures, basics and gate terminal requirements.INDEX TERMS GaN devices, review, wide bandgap semiconductor.

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Section: Normally-off Transistorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Gallium Nitride Power Devices: A State of the Art Review

Udabe,

Baraia-Etxaburu,

Diez

2023

IEEE Access

View full text Add to dashboard Cite

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Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

Bottaro

Rizzo

2022

Energies

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Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential to benefit from their good features and to account for the limits of the current technology. Circuit models of power MOSFETs have been deeply investigated by academia and industry for a long time. These models are able to emulate the datasheet information, and they are usually provided by device manufacturers as netlists that can be simulated in any kind of SPICE-like software. This paper firstly highlights the similarities and differences between MOSFETs and GaN HEMTs at the datasheet level. According to this analysis, the features of MOSFET circuit models that can be adopted for GaN HEMT modelling are discussed. This task has been accomplished by overviewing the literature on MOSFETs circuit models as well as analysing manufacturers netlists, thus highlighting the models MOSFETs valid or adaptable to GaN HEMTs. The study has revealed show that some models can be adapted for the GaN HEMT devices to emulate static characteristics at room temperature while the MOSFET models of dynamic characteristics can be used for GaN HEMT devices. This study enables the devices modellers to speed up the GaN HEMT modelling thanks to the use of some well-established MOSFET models. In this perspective, some suggestions to develop accurate GaN HEMT models are also provided.

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Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter

Abstract: This work has been partially funded by the Region Occitanie Pyrénées-Méditerranée.

Cited by 2 publications

References 8 publications

Gallium Nitride Power Devices: A State of the Art Review

Gallium Nitride Power Devices: A State of the Art Review

Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

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