Performance and Comparative Analysis of Heterojunction Structure Based GAA-NWTFET for Low Power Applications

Gate-All-Around Nanowire TFET with Heterojunction and Core Insulator: Design and Analysis

“…This section compares the performance characteristics (including energy band analysis, transfer characteristics, electric field, potential, SS, output characteristics, DIBL, and RF analysis 22 ) of conventional Si-GAA-NWTFET, SiGe-GAA-NWTFET, and SiGe-CI-GAA-NWTFET. 23 Conclusion section of the work presents the conclusion.…”

“…This enhances the injection of carriers among the source area and the channel area and, consequently, tunneling width is reduced and I ON increases at low power supply. 23 The source area has been doped at z E-mail: sadhanas.ec.19@nitj.ac.in; chaudharyt@nitj.ac.in ECS Journal of Solid State Science and Technology, 2023 12 113013 10 20 cm −3 to generate a p + region, the channel region remains intrinsic at 10 15 cm −3 , and the drain area has been doped at 10 18 cm −3 to create an n-type region. The doping profile is uniform throughout the three areas.…”