Performance and process characteristic of glass interposer with through-glass-via(TGV)

Abstract

Primary approach of 3DIC packaging usually adopts organic substrates or silicon interposer as the intermedium between multi-integrated circuits (ICs) and printed circuit board. Current organic substrates face the limitations in poor dimensional stability, trace density and CTE mismatch to silicon. Silicon interposer is a good solution for high-pin-count ICs and high performance applications based on the mature Si technology of advance via formation and fine line Cu damascene multilevel interconnection process, but silicon interposer is limited by high cost. Glass is proposed as ideal interposer material due to high resistivity, low dielectric constant, low insertion loss and adjustable coefficient of thermal expansion (CTE) for the 3DIC assembly integration and most importantly low cost solution, [1-4]. The main focus of this paper is on (a) TGV electrical design, simulation and characterization, (b) wafer level integration in TGV formation, two RDL on the front-side, one RDL on the backside and polymer-based PBO for the passivation, (c) assembly process of silicon chip stack on the glass interposer with Kelvin resistance measurement. The glass interposer was assessed to have excellent electrical characteristicsand is potentially to be applied for 3D product applications.

Eco‐friendly glass wet etching for MEMS application: A review

“…One significant advantage of alkaline etching is its high selectivity, owing to its anisotropic characteristics 73–76 . This makes it a crucial technique for fabricating delicate patterns and structures 72,77–81 . However, several obstacles exist in applying alkaline etching in industrial settings.…”

“…[73][74][75][76] This makes it a crucial technique for fabricating delicate patterns and structures. 72,[77][78][79][80][81] However, several obstacles exist in applying alkaline etching in industrial settings. One major drawback is the hightemperature process, with etching typically occurring at temperatures above 70 • C. Additionally, alkaline etching tends to be time-consuming.…”

The interfacial reliability of through-glass vias for 2.5D integrated circuits

“…In 2.5 D integrated circuits (IC) technology, active dies are placed side-by-side on a passive interposer and connected to the packaging substrate by through vias (Lu, 2009;Koester et al, 2008). 2.5 D integration brings many advantages over conventional 2 D integration, such as higher I/O density, better performance, smaller footprint and lower power consumption, while avoiding several challenges facing the vertical diestacking based 3DICs (Lu, 2009;Chien et al, 2013b, Koester et al, 2008. Comparing to silicon (Si), which is the conventional substrate material for interposers, glass possesses many unique attributes, such as adjustable coefficient of thermal expansion (CTE), dimensional stability, good surface quality, high resistivity, low dielectric constant, low insertion loss and low cost, making it a promising alternative interposer substrate material to Si for 2.5 D ICs (Ding et al, 2014;Chien et al, 2013a;Ching-Kuan et al, 2016).…”