Performance and quality analysis of Mo-Si multilayers deposited by ion beam sputtering and magnetron sputtering

Effect of working gas pressure on interlayer mixing in magnetron-deposited Mo/Si multilayers

“…The degree of intermixing is usually associated with the energy of deposited atoms typical of a particular deposition method. The most intermixing is observed in MXMs deposited by diode, 35 triode, or ion-beam 34,36 sputtering. The least intermixing is common in the case of magnetron sputtering [36][37][38] and e-beam evaporation combined with the ion-beam polishing.…”

“…The most intermixing is observed in MXMs deposited by diode, 35 triode, or ion-beam 34,36 sputtering. The least intermixing is common in the case of magnetron sputtering [36][37][38] and e-beam evaporation combined with the ion-beam polishing. [39][40][41] In addition, the interlayer thickness at Si-on-Mo interface was found to depend on the structural state of the Mo layer: in amorphous molybdenum, it is twice as large as in crystalline Mo.…”

Factors Affecting Extreme Ultraviolet Reflectivity of Mo/Si Multilayer Films Synthesized by Superconducting Magnetron Sputtering

“…The reflectivity of the Mo/Si optical mirrors available now has reached 65 to 67%. [1][2][3] If the reflectivity is increased, say, by 1% per mirror, the total increase in reflectivity is expected to reach 19% in a lithography system involving a total of twelve mirrors. An increase in reflectivity by 1%, therefore, is necessary for shortening the exposure time, which directly affects the enhancement of productivity.…”