2020
DOI: 10.1109/tie.2019.2945299
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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

Abstract: His current research interests include electrothermal characterization of power devices, reliability and condition monitoring. He is author or co-author of more than 40 publications in journals and international conferences Ruizhu Wu received the B.Sc. in Telecommunication Engineering from the

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Cited by 138 publications
(56 citation statements)
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“…The obtained simplification permits for using the low costs FPGA devices because the core of calculation can be based on the parallel add/subtract and multiply operation. If we take into account a very high operating frequency of the GaN or SiC power switches and the limitations of the one-core processors, the undertaken research is purposeful and justified [33]- [36]. The proposed solution is particularly useful when considering the irregular space of voltage vectors.…”
Section: Discussionmentioning
confidence: 99%
“…The obtained simplification permits for using the low costs FPGA devices because the core of calculation can be based on the parallel add/subtract and multiply operation. If we take into account a very high operating frequency of the GaN or SiC power switches and the limitations of the one-core processors, the undertaken research is purposeful and justified [33]- [36]. The proposed solution is particularly useful when considering the irregular space of voltage vectors.…”
Section: Discussionmentioning
confidence: 99%
“…Both these factors have led to initial uncertainty of the reliability of wide bandgap devices, however this is now being understood much better than in the early versions of these devices. Recent work into a comparative analysis of the long term reliability and performance of SiC devices [23] has provided detailed insight into these aspects and a similar review for GaN power electronics devices in [24]. In both cases it is clear that while challenges remain, the improvement of both wide bandgap technologies that are of fundamental importance to power electronics has been dramatic.…”
Section: Barriers and Drivers For Adoption Of Wide Bandgap Power Electronicsmentioning
confidence: 99%
“…Reducing the gate voltage will also affect the switching transients, which can be characterized using a conventional double pulse test setup [15,16], as shown in Fig. 3.…”
Section: B Switching Transientsmentioning
confidence: 99%