Performance assessment of cavity on source dual material split gate GaAs/InAs/Ge junctionless TFET for label-free detection of biomolecules

Dharmender,; Nigam, Kaushal; Kumar, Satyendra

doi:10.1007/s00339-022-06017-7

Cited by 8 publications

(6 citation statements)

References 44 publications

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“…However, there is still room, for exploration in this field. One avenue to consider is analyzing biomolecules that have low dielectric constants, such, as Uricase (1.54) streptavidin (2.1), protein (2.50), ChOx (3.30), and APTES (3.57) [11,23,25,26]. This expansion of research will contribute to an understanding of the capabilities of the biosensor.…”

Section: Discussionmentioning

confidence: 99%

“…Compared to conventional MOSFET-based biosensors, our JF-ED-VTFET biosensor has benefits such as lower power consumption, lower leakage current, quicker operation, and enhanced subthreshold swing. The performance of Tunnel Field Effect Transistors (TFETs) has been significantly enhanced using a variety of techniques, such as the use of high-k materials, hetero and compound materials, and vertical TFET layouts [22][23][24][25][26]. For applications that require higher performance but lower power consumption, TFETs are considered as the optimal choice due to their superior subthreshold properties, reduced leakage, increased ON current, scalability and compatibility with 3D integration [27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

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Insights into the design principles of JF-ED-VTFET for biosensing application

Singh,

Agnihotri,

Tewari

et al. 2024

Phys. Scr.

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In this research article, we have designed a junction-free electrostatically doped vertical tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We incorporated a nano-cavity within the gate-oxide layer near the source end of the FET to enable the detection of biomolecules based on the principle of dielectric modulation and without the requirement of external labeling. The proposed biosensor is thoroughly analyzed, considering various aspects such as electric field, energy band, transfer characteristics, and sensitivity parameters including energy band diagram, ON-current, ION/IOFF ratio, electrical analysis, and surface potential characteristics. The investigation of sensitivity encompasses practical challenges, such as different filling factors and step-profiles resulting from steric hindrance. Moreover, the impact of temperature variations and nano-cavity dimensions on the performance of the biosensor is assessed. To evaluate the effectiveness of the biosensor, representative biomolecules are considered for performance assessment, providing insights into the capacity of the biosensor in detecting and analyzing these molecules.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Insights into the design principles of JF-ED-VTFET for biosensing application

Singh,

Agnihotri,

Tewari

et al. 2024

Phys. Scr.

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“…A higher sensitivity indicates a higher chance of identifying the targeted biomolecules. 42,43 The various sensitivity parameters can be estimated as follows:…”

Section: Sensitivity Performance Analysismentioning

confidence: 99%

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor

Dash,

Panda

2024

Int J Numerical Modelling

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This study presents a new dual‐metal dopingless tunnel field effect transistor with a Germanium source (GeS‐DM‐DLT) for label‐free biomolecule detection. Introducing a Ge source and dual‐metal gate provides improved drain current. We have considered an L‐shaped cavity at the top and bottom source metal region for investigating the sensitivity. The biosensor's sensitivity has been measured using the neutral biomolecules' dielectric constants (varying the k‐values in the cavity). The sensor's DC performance is investigated using transfer characteristics, BTBT rate, energy band, and electric field variation for different k‐values. The sensitivity performance of the proposed biosensor is evaluated in terms of different DC parameters (drain current, surface potential, subthreshold swing, interband tunneling rate, electric field) and RF parameters (parasitic capacitance, transconductance, cut‐off frequency, maximum frequency). The suggested biosensor offers a much‐improved SON of 9.86 × 108 and SRATIO of 1.94 × 104 for a dielectric constant of 22.0 at room temperature. Further research has been done to study the effects of dielectric materials, interface trap carriers (ITC), and temperature on drain current, drain current sensitivity, and other sensitivity parameters. The article also includes investigating the influence of the fill factor on sensitivity performance. The GeS‐DM‐DLT sensor performs best in fully‐filled conditions compared to the partially‐filled condition inside the cavity region.

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“…The sensitivity is the difference between target biomolecules and the air (reference condition) occupied in the cavity. Sensitivity increases the likelihood of identifying the targeted biomolecules [21,36]…”

Section: Sensitivity Performance Investigationmentioning

confidence: 99%

“…Furthermore, FET-based biosensors have substantial drawbacks, including low sensitivity, a long response time to identify biomolecules, random doping fluctuations (RDFs), fabrication complexity, and the necessity for a costly annealing process [17,18]. Thus, tunneling FET-constructed biosensors with steeper SS, quick reaction, low power consumption, and high sensitivity [19][20][21] have been presented to solve the earlier difficulties.…”

Section: Introductionmentioning

confidence: 99%

A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

Panda

Dash

2023

Phys. Scr.

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This paper examines the sensitivity of a newly presented heterojunction dopingless tunnel field effect transistor (HJ-DLTFET) biosensor for the label-free detection of biomolecules. The etched nanocavity is introduced in the source metal region for better sensing ability. The dielectric constants (k) of five neutral biomolecules are employed in this paper to test the sensitivity of the proposed biosensor. The electrostatic performance is investigated based on transfer characteristics, energy band, tunneling distance (λ) at source/channel (S/C) interface, drain current (ID) variation for different dielectric constant (k), drain to source voltage (VDS) variation and mole fraction (x) variation respectively. Further, the RF performance analysis includes gate/source capacitance (Cgs), total gate capacitance (Cgg), cut-off frequency (ft), and maximum frequency (fm) analysis. Similarly, sensitivity analysis consists of current sensitivity (SID), current ratio sensitivity (Sratio), average SS sensitivity (SSS), Cgs sensitivity, Cgg sensitivity, ft sensitivity, and fm sensitivity. The investigation is carried out with the variation of neutral biomolecules in terms of various k inside the cavity. Similarly, the impact of charged biomolecules on the sensitivity of the proposed biosensor is investigated. The HJ-DLTFET sensor provides the maximum sensitivity SID of 1.56×1010, Sratio of 5.95×109, and SSS of 0.80 for Gelatin (k = 12.00) at room temperature using the Silvaco TCAD simulation tool. Combining a low band gap Si0.6Ge0.4 source with a high band gap silicon channel and a high-k (HfO2) improves drain current sensitivity without impacting leakage current.

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Performance assessment of cavity on source dual material split gate GaAs/InAs/Ge junctionless TFET for label-free detection of biomolecules

Cited by 8 publications

References 44 publications

Insights into the design principles of JF-ED-VTFET for biosensing application

Insights into the design principles of JF-ED-VTFET for biosensing application

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor

A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor

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Performance assessment of cavity on source dual material split gate GaAs/InAs/Ge junctionless TFET for label-free detection of biomolecules

Cited by 8 publications

References 44 publications

Insights into the design principles of JF-ED-VTFET for biosensing application

Insights into the design principles of JF-ED-VTFET for biosensing application

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor

A single gate Si1−xGex dopingless TFET functioned as an effective label-free biosensor

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A single gate Si_1−xGe_x dopingless TFET functioned as an effective label-free biosensor