2008
DOI: 10.1117/12.795235
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Performance based CID imaging: past, present, and future

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Cited by 7 publications
(12 citation statements)
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“…Due to the field oxide, the readout architecture, and the nature of the underlying charge collection architecture, CIDs are inherently anti-blooming. CIDs are also well suited to space; they are remarkably resistant to gamma-rays and neutrons (e.g., Marshall et al 2001) and have radiation tolerance past 5 Mrad (Bhaskaran et al 2008). In addition, CIDs use NDROs that minimize the effects of cosmic rays because count rates are monitored and radiation events are removed from the final photon flux.…”
Section: Charge Injection Devicesmentioning
confidence: 99%
“…Due to the field oxide, the readout architecture, and the nature of the underlying charge collection architecture, CIDs are inherently anti-blooming. CIDs are also well suited to space; they are remarkably resistant to gamma-rays and neutrons (e.g., Marshall et al 2001) and have radiation tolerance past 5 Mrad (Bhaskaran et al 2008). In addition, CIDs use NDROs that minimize the effects of cosmic rays because count rates are monitored and radiation events are removed from the final photon flux.…”
Section: Charge Injection Devicesmentioning
confidence: 99%
“…Post-injection the pixel restarts accumulating charge holes under the storage node without affecting the state of other pixels. CIDs are intrinsically anti-blooming, tolerant to changes in charge transfer efficiency, reject cosmic-rays through the NDRO process, and are radiation hard (Bhaskaran et al 2008); they are appropriate candidates for space-based detectors. Ninkov et al (1994) initially demonstrated the viability of CIDs for astronomical imaging.…”
Section: Charge Injection Devicesmentioning
confidence: 99%
“…The charge is measured by the voltage change induced by transferring the charge between the two gates. Figure 13 shows the various phases of an active pixel operation and a detailed description can be found in [23]. After the integration/exposure stage, the charge is transferred to the sense gate.…”
Section: Image Sensor: Cidmentioning
confidence: 99%
“…The difference between these measurements is proportional to the amount of photon-generated charge within the pixel site. The photon generated charge may be cleared by collapsing the potential wells under both the "storage" and "sense" gates by "injecting" the charge into the underlying substrate to clear the array for new frame integration [23].…”
Section: Image Sensor: Cidmentioning
confidence: 99%
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