Performance comparison between photovoltaic and thermoradiative devices

Abstract

Photovoltaic (PV) and thermoradiative (TR) devices are power generators that use the radiative energy transfer between a hot and a cold reservoir. For PV devices, the semiconductor at the cold side (PV cell) generates electric power; for TR devices, the semiconductor at the hot side (TR cell) generates electric power. In this work, we compare the performance of the photovoltaic and thermoradiative devices, with and without the non-radiative processes. Without non-radiative processes, PV devices generally produce larger output powers than TR devices. However, when non-radiative processes become important, the TR can outperform the PV devices. This conclusion applies to both far-field and near-field based devices. A key difference in efficiency between PV and TR devices is pointed out. Journal of Applied PhysicsThis work may not be copied or reproduced in whole or in part for any commercial purpose. Permission to copy in whole or in part without payment of fee is granted for nonprofit educational and research purposes provided that all such whole or partial copies include the following: a notice that such copying is by permission of Mitsubishi Electric Research Laboratories, Inc.; an acknowledgment of the authors and individual contributions to the work; and all applicable portions of the copyright notice. Copying, reproduction, or republishing for any other purpose shall require a license with payment of fee to Mitsubishi Electric Research Laboratories, Inc. All rights reserved.Photovoltaic (PV) and thermoradiative (TR) devices are power generators that use the radiative energy transfer between a hot and a cold reservoir. For PV devices, the semiconductor at the cold side (PV cell) generates electric power; for TR devices, the semiconductor at the hot side (TR cell) generates electric power. In this work, we compare the performance of the photovoltaic and thermoradiative devices, with and without the non-radiative processes. Without non-radiative processes, PV devices generally produce larger output powers than TR devices. However, when non-radiative processes become important, the TR can outperform the PV devices. This conclusion applies to both far-field and near-field based devices. A key difference in efficiency between PV and TR devices is pointed out.

Thermoradiative Cells Based on a p-type Cu3SbSe4 Semiconductor: Application of a Detailed Balance Model

“…2, the calculated E g of Cu 3 SbSe 4 is about 0.27 eV, in agreement with experimental data (0.1-0.4 eV). 6 The electronic structure near the valence band maximum (VBM) is mainly due to Cu-3d and Se-4p states, while the conduction band minimum (CBM) is mainly attributed to Sb-5s and Se-4p states.…”

“…That is, the TRC working temperature T c must be balanced. Some authors have fixed the upper limiting value of T c at about 800 K. 44 However, practical implementations of Cu 3 SbSe 4 TRCs should restrict the value of T c to temperatures slightly lower of about 500-600 K, Up to now, we have considered that Cu 3 SbSe 4 TRCs have an electron carrier concentration that makes their QFLs to be placed at the energy Ey+ E G /2. However, as previously discussed in "Detailed Balance Model for Thermoradiative Cells" section, the barrier height that is formed in the pnjunction depends on the carrier concentration levels in each one of the two sides of the junction.…”

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells

“…1(e). TR cells were only proposed in 2014 [17], but they have been investigated by a number of researchers [18][19][20][21][22] and also could reach high conversion efficiencies.…”

Spatial profiles of photon chemical potential in near-field thermophotovoltaic cells

“…The consideration of radiative recombination and reabsorption is an approximate approach of treating luminescence and photon recycling effects without explicitly using photon chemical potential in the Bose-Einstein statistics [17,18]. External luminescence also affects the net radiative transfer rate between the emitter and the cell, especially when the emitter is at moderate temperatures [19][20][21][22]. These studies used a direct modeling method for photon exchange between the emitter and the cell by assuming a spatially uniform photon chemical potential that is equal to the elementary charge (q) times the operating voltage (V); furthermore, the detailed balance approach was applied to calculate the carrier concentrations and thus the recombination rates.…”