Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon

Niranjan, S; Rao, Ankit; Muralidharan, R.; Sen, Prosenjit; Nath, Digbijoy N.

doi:10.1109/ted.2021.3140193

Cited by 13 publications

(4 citation statements)

References 21 publications

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“…Thus, Au-free ohmic contact metal schemes should be proposed and investigated for achieving the purpose. Over the years, groups from all over the world have studied and proposed a number of metal schemes, such as Ti/Al/W [33], Ta/Al/Ta [69], Ti/Al/Ti/TiN [70,71], Ta/Si/Ti/Al/Ni/Ta [72], Ti/Al/Ni/Pt [73], Ti/Al/TiN [74], Ti/TiN [75], Ti/Al/NiV [76], Ti/Al/Ti/W [77,78], Ti x Al y [79], and Ti/Al/Ni/Ti [80]. In these schemes, the cap layer of Au is replaced by W, TiN, and Ta, etc.…”

Section: Au-free Ohmic Contact Technique 31 Existing Advanced Au-free...mentioning

confidence: 99%

“…The benchmark of R C values against annealing temperatures of state-of-the-art Au-free ohmic contacts for the AlGaN/GaN HEMT can be seen in Figure 10, including recess and non-recess schemes [33,[69][70][71][72][73][74][75][76][77][78][79][80][81][82]. It can be seen that low R C values (<0.3 Ω•mm) always occur with high annealing temperature (>600 • C) conditions.…”

Section: Low-temperature Au-free Ohmic Contact Technologymentioning

confidence: 99%

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Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

Zhang

Miao

et al. 2022

Crystals

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AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance. Firstly, Au-contained metal stacks combined with RTA high-temperature ohmic contact schemes were presented and analyzed, including process conditions and contact formation mechanisms. Considering the issues with the Au-contained technique, the overview of a sequence of Au-free schemes is given and comprehensively discussed. In addition, in order to solve various problems caused by high-temperature conditions, novel annealing techniques including microwave annealing (MWA) and laser annealing (LA) were proposed to form Au-free low-temperature ohmic contact to AlGaN/GaN HEMT. The effects of the annealing method on surface morphology, gate leakage, dynamic on-resistance (RON), and other device characteristics are investigated and presented in this paper. By using a low-temperature annealing atmosphere or selective annealing method, gate-first Si-CMOS compatible AlGaN/GaN HEMT technology can be realized for high frequency and power application.

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Section: Au-free Ohmic Contact Technique 31 Existing Advanced Au-free...mentioning

confidence: 99%

Section: Low-temperature Au-free Ohmic Contact Technologymentioning

confidence: 99%

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

Zhang

Miao

et al. 2022

Crystals

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“…Ubiquitous in integrated circuits, metal–nonmetal interfaces, such as Au–GaN interfaces, − are often identified as bottlenecks for the performance of devices with the heat dissipation abilities playing an important role. − With device dimensions shrinking toward nanoscale sizes, an accurate understanding and modeling of the energy transfer mechanisms at such interfaces is highly desirable. The thermal energy flow is complex due to the mismatch (e.g., energy and momentum) between the electrons, which are the major thermal energy carriers on the metal side, and the lattice vibrations or phonons on the nonmetal side.…”

Section: Introductionmentioning

confidence: 99%

Multitemperature Modeling of Thermal Transport across a Au–GaN Interface from Ab Initio Calculations

Tong

Dernov

et al. 2022

ACS Appl. Electron. Mater.

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With device dimensions shrinking toward nanoscale sizes, an accurate understanding and modeling of the thermal energy transfer mechanisms at metal–nonmetal interfaces becomes highly desirable. To model the thermal transport across the Au–GaN interface, we developed a general multitemperature model (MTM) that accounts for both electron and phonon transport and allows for a nonequilibrium phonon population described as a sum of thermal distributions of the phonon branches. The model is populated with material parameters computed from ab initio calculations and used to describe the temperature profile across a Au–GaN junction 400 nm in length subjected to constant temperature differential, continuous-wave laser heating of Au, and constant heat flux on GaN. The calculated steady-state and time-dependent temperature profiles reveal strongly nonequilibrium electron–phonon and phonon–phonon interfacial regions created through energy carrier coupling. Our results indicate that a multitemperature-based model is required for the accurate resolving of the thermal energy flow across metal–nonmetal interfaces. Our MTM will advance the theoretical tool to investigate nonequilibrium thermal transport across metal–nonmetal interfaces.

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“…19) As the result, many studies use Au-free ohmic contacts to fabricate devices. [20][21][22][23][24] However, reports on improving device linearity through Au-free ohmic contacts are limited.…”

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confidence: 99%

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Hsu,

Lin,

Lee

et al. 2024

Appl. Phys. Express

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In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (R c) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at V DS = 28 V, and an OIP3/P DC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at V DS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.

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Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon

Cited by 13 publications

References 21 publications

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

Multitemperature Modeling of Thermal Transport across a Au–GaN Interface from Ab Initio Calculations

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

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