Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Abstract

In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

“…The device was biased in the linear region with VGS = -5 V and VDS = 0.5 V. The Hooge coefficients (αH) at f = 100 Hz was extracted [22] to be 3.2 × 10 -6 with the corresponding noise density of 3.9 × 10 -17 Hz -1 . The present sample B2 has shown lower αH than other works [23,24], indicating that the reduced surface electron trapping and improved interfacial quality was obtained by the surface passivation of the USPDgrown Al2O3. The crystalline quality the USPD-grown Al2O3 and the trapping-related gate leakage mechanisms the fabricated MOS-gate have been studied in our previous work [25].…”