Performance comparison of Si and GaN transistors in a family of synchronous buck converters for LED lighting applications

Duarte, Renan R.; Ferreira, G. F. Leal; Costa, Marco A. Dalla; Alonso, J.M.

doi:10.1109/ias.2016.7731892

Cited by 13 publications

(4 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The power devices based on WBG materials have a higher breakdown voltage due to their high electric breakdown field. For example, the Si Schottky diodes are available at rated voltages of less than 300 V, while the commercial SiC Schottky diodes are usually available with rated voltages up to 600 V. The market for WBG-based power semiconductors offers switches with different voltage levels such as SiC devices that are available at rated voltages up to 1700 V and current ratings of 80 A. GaN devices have a rated voltage up to 1200 V and current up to 90 A, allowing these devices to be used in the MMC topology for WECSs [171,179].…”

Section: Discussionmentioning

confidence: 99%

“…As expected, the loss reduction reached 70% when pure SiC devices were used, and in the HyS model, the loss reduction reached 45% compared to the pure Si-based model. Thus, the use of HyS-based devices is considered as a satisfactory compromise for power converter topologies [179,180]. Thereafter, a solid-state circuit breaker (SSCB) based on a Si IGBT and SiC MOSFET HyS was proposed for HVDC power applications [173].…”

Section: Si Igbt and Sic Mosfet Hybrid Technologymentioning

confidence: 99%

See 1 more Smart Citation

A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems

Athwer,

Darwish

2023

Energies

View full text Add to dashboard Cite

This paper presents a comprehensive review on the employment of wide bandgap (WBG) semiconductor power devices in wind energy conversion systems (WECSs). Silicon-carbide- (SiC) and gallium-nitride (GaN)-based power devices are highlighted and studied in this review, focusing on their application in the wind energy system. This is due to their premium characteristics such as the operation at high switching frequency, which can reduce the switching losses, and the capability to operate at high temperatures compared with silicon (Si)-based devices. These advantages promote the replacement of the conventional Si-based devices with the WBG semiconductor devices in the new modular converter topologies due to the persistent demand for a more-efficient power converter topology with lower losses and smaller sizes. The main objective of this paper was to provide a comprehensive overview of the WBG power devices commercially available on the market and employed in the modular converter topologies for renewable energy systems. The paper also provides a comparison between the WBG power technologies and the traditional ones based on the Si devices. The paper starts from the conventional modular power converter topology circuits, and then, it discusses the opportunities for integrating the SiC and WBG devices in the modular power converters to improve and enhance the system’s performance.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Si Igbt and Sic Mosfet Hybrid Technologymentioning

confidence: 99%

A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems

Athwer,

Darwish

2023

Energies

View full text Add to dashboard Cite

show abstract

“…A previous version of this work was published by the authors in [45]. For this paper, the loss analysis was redone using the SIMETRIX/Simplis simulator due to its "efficiency analysis" tool.…”

Section: Performance Comparison This Section Presents a Comparisomentioning

confidence: 99%

Study on the Application of Gallium Nitride Transistors in Power Electronics

Duarte¹,

Ferreira²,

Costa³

et al. 2017

Eletrônica de Potência

View full text Add to dashboard Cite

Wide bandgap semiconductors have emerged as an attractive option for silicon (Si) replacement in the recent years. Among the new materials, gallium nitride (GaN) has been considered as the most promising candidate. This paper presents an overview of the GaN technology in power electronics. The review focuses on the main aspects of GaN transistors, such as electrical, thermal and economical characteristics. A comparison between Si and GaN switching devices in a family of synchronous buck converters designed for LED lighting applications is also presented. This comparison was performed using synchronous buck converters, designed under same parameters, at five different switching frequencies, ranging from 100 kHz to 1 MHz. Efficiency and temperatures were recorded. GaN based converters presented higher efficiency and lower operating temperatures in all cases, with a maximum efficiency of 96.8% and a minimum of 94.5%. Besides, Si-based converters exhibited a higher performance degradation as switching frequency and dead time increase.

show abstract

“…High-speed switching is advantageous with regard to power density and cost because it can reduce the size of the system in various applications. Because of these advantages, studies have been conducted to compare the performance of WBG device-based and Si-based systems in various applications [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application

Hyung

Kim

2020

Energies

View full text Add to dashboard Cite

A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induction heating (IH) systems. The WBG device presents advantages such as high-speed switching owing to its excellent physical properties, and when it is applied to the IH system, a high output power can be achieved through high-frequency driving. To exploit these advantages effectively, a suitability analysis comparing SiC and GaN with IH systems is required. In this study, SiC MOSFET and GaN HEMT are applied to the general half-bridge series resonant converter topology, and comparisons of the conduction loss, switching loss, reverse conduction loss, and thermal performance considering the characteristics of the device and the system conditions are performed. Accordingly, the device suitability in an IH system is analyzed. To verify the device conformance analysis, a resonant converter prototype with SiC and GaN rated at 650 V is constructed. The analysis is verified by an experimental comparison of power loss and thermal performance.

show abstract

Performance comparison of Si and GaN transistors in a family of synchronous buck converters for LED lighting applications

Cited by 13 publications

References 14 publications

A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems

A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems

Study on the Application of Gallium Nitride Transistors in Power Electronics

Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application

Contact Info

Product

Resources

About