Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP

Neural Network Based Lna Design for Mobile Satellite Receiver

“…Literature survey confirms the fact that most convenient substrate for InGaAs is InP (Indium Phosphide) and the combination is termed InGaAs/InP. Due to its advantages in terms of low noise and high gain, InGaAs/InP has recently gained recognition in space applications [14].…”

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

“…The interface between the different semiconductor materials create hetero junctions, hence the name HBT [170]. The main advantage of HBT is that it can handle signals of very high frequencies up to several GHz and is commonly used in modern ultra fast circuits, RF systems and also used in high power efficiency application such as power amplifiers in cellular phones.…”

Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation

“…Much of this improvement is due to the highbase doping achievable through the use of wide band-gap emitters as well as superior material properties of the state-ofthe-art HBTs due to band-gap engineering techniques and epitaxial growth developments. For example, by varying Al content in AlGaAs/GaAs HBT, a graded band-gap can be engineered [5][6][7][8]. Lithographic techniques can create device features as narrow as 130 nm and the industry sees the road ahead pretty well drawn up for line-widths down to 50 nm [9].…”