Performance enhance of CMOS-MEMS thermoelectric infrared sensor by using sensing material and structure design

Shen, Tong; Chang, Kai-Chieh; Sun, Chih-Ming; Fang, Weileun

doi:10.1088/1361-6439/aaf7dd

Cited by 38 publications

(24 citation statements)

References 29 publications

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“…The total noise voltage Vn as obtained within the bandwidth of 10 kHz is 4.34 μV and 4.27 μV for devices A and B, respectively. As for the D  and NEP for both devices at the frequency of 0 Hz, it is calculated by using Equation [44] as follows:…”

Section: Resultsmentioning

confidence: 99%

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

Guo

Wang

et al. 2023

IEEE Photonics J.

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The resistive microbolometer fabricated by using CMOS technology can be monolithically integrated with the readout circuit but usually performs poorly in responsivity and detectivity. In this paper, the poly-Si microbolometer with Al grating structure is demonstrated in the standard CMOS process. The simulation results show that not only are surface plasmon polaritons generated at the interface of the Al grating and SiO2, Al grating also provides the infrared resonant cavity required for the absorber, which improves the responsivity of the microbolometer. According to the experimental results, the maximum detectivity of the microbolometer with the grating structure reaches up to 2.2610 9 cmHz 1/2 /W at 10 μm, which means an increase by 27.8% compared to the one without the Al grating. Moreover, the average detectivity of the microbolometer is also improved when the wavelength ranges from 7 μm to 13 μm. It is effortless to implement the proposed high-performance microbolometer in a unit structure based on CMOS technology, which is favorable to high-density array integration.

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Section: Resultsmentioning

confidence: 99%

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

Guo

Wang

et al. 2023

IEEE Photonics J.

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“…The amplifier was also added later to the sensor design. Numerous micromachined thermal flow sensors have been surveyed for different materials and applications including battery-free, wireless devices, nano mechanical sensor [171], infrared sensors [172][173][174][175][176], and calorimetric sensors [144,[177][178][179][180]. The high-quality CMOS foundry services provided by TSMC and UMC foundry were highly welcome over the past two decades.…”

Section: Cmos Mems Sensor Design Flowmentioning

confidence: 99%

Foundry Service of CMOS MEMS Processes and the Case Study of the Flow Sensor

et al. 2022

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The complementary metal-oxide-semiconductor (CMOS) process is the main stream to fabricate integrated circuits (ICs) in the semiconductor industry. Microelectromechanical systems (MEMS), when combined with CMOS electronics to form the CMOS MEMS process, have the merits of small features, low power consumption, on-chip circuitry, and high sensitivity to develop microsensors and micro actuators. Firstly, the authors review the educational CMOS MEMS foundry service provided by the Taiwan Semiconductor Research Institute (TSRI) allied with the United Microelectronics Corporation (UMC) and the Taiwan Semiconductor Manufacturing Company (TSMC). Taiwan’s foundry service of ICs is leading in the world. Secondly, the authors show the new flow sensor integrated with an instrumentation amplifier (IA) fabricated by the latest UMC 0.18 µm CMOS MEMS process as the case study. The new flow sensor adopted the self-heating resistive-thermal-detector (RTD) to sense the flow speed. This self-heating RTD half-bridge alone gives a normalized output sensitivity of 138 µV/V/(m/s)/mW only. After being integrated with an on-chip amplifier gain of 20 dB, the overall sensitivity of the flow sensor was measured and substantially improved to 1388 µV/V/(m/s)/mW for the flow speed range of 0–5 m/s. Finally, the advantages of the CMOS MEMS flow sensors are justified and discussed by the testing results.

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“…Herein, the response time is the time required by the device to detect the object and reach the stable state, which reflects the response speed of the device to external excitation [ 18 , 19 ]. In the past few decades, previous research has been mainly focused on shortening the response time of the device by optimizing thermopile structures [ 20 , 21 , 22 , 23 , 24 ]. However, accurate measurement methods for this parameter have not been well developed.…”

Section: Introductionmentioning

confidence: 99%

“…Traditionally, the test of response time requires a complex system involving a blackbody radiation source, a chopper, and other equipment. With rotation of the chopper blades, the test system provides a changing radiation so that the sensor outputs the corresponding voltage, from which the response time of the device can be obtained [ 20 , 22 , 23 , 24 , 25 , 26 , 27 , 28 ]. Nevertheless, it takes time for the chopper blades to rotate, which prolongs the response time of the device.…”

Section: Introductionmentioning

confidence: 99%

A Highly Accurate Method for Measuring Response Time of MEMS Thermopiles

Shi

Zhou

et al. 2022

Micromachines

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The response time is an important parameter for thermopiles sensors, which reflects the response speed of the device. The accurate measurement of response time is extremely important to evaluate device characteristics for using them in suitable scenarios. In this work, to accurately measure the response time of thermopile sensors, an Al microheater is integrated in a MEMS thermopile as an in—situ heat source. Compared with the traditional chopper measurement method for response time, this approach avoids mechanical delay induced by chopper blades. Accordingly, based on this approach, the response time of the device is measured to be 6.9 ms, while that is 12.7 ms when a chopping system is used, demonstrating that an error of at least 5.8 ms is avoided. Such an approach is quite simple to realize and provides a novel route to accurately measure the response time.

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Performance enhance of CMOS-MEMS thermoelectric infrared sensor by using sensing material and structure design

Cited by 38 publications

References 29 publications

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure

Foundry Service of CMOS MEMS Processes and the Case Study of the Flow Sensor

A Highly Accurate Method for Measuring Response Time of MEMS Thermopiles

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