2016 International Conference on Inventive Computation Technologies (ICICT) 2016
DOI: 10.1109/inventive.2016.7824876
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Performance enhancement and supression of short channel effects of 14nm double gate FETs by using gate stacked high-k dielectrics & workfunction variation

Ashish A. Bait1,
N. P. Narkhede2,
Suraj M. More3
et al.
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Cited by 3 publications
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Classification of single and double-gate nanoscale MOSFET with different dielectrics from electrical characteristics using soft computing techniques

Deyasi1,
Mukherjee2,
Bhattacharjee3
et al. 2019
Int. j. inf. tecnol.
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Classification of single and double-gate nanoscale MOSFET with different dielectrics from electrical characteristics using soft computing techniques

Deyasi1,
Mukherjee2,
Bhattacharjee3
et al. 2019
Int. j. inf. tecnol.
3
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Analysis of nano sheet field effect transistor based on performance under different temperature and doping concentrations for 12 nm device

Krishna,
Jayanthi,
Shylu Sam
et al. 2024
Micro and Nanostructures
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Study of Impact of Channel Grading on 14nm Double Gate Finfet Performance

Mandke1,
Rane2,
Dupate3
et al. 2021
2021 International Conference on Communication Information and Computing Technology (ICCICT)
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