2022
DOI: 10.1016/j.optmat.2022.112969
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Performance enhancement investigations of the novel CZTGS thin-film solar cells

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Cited by 7 publications
(11 citation statements)
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“…To evaluate the device performance, the effects of deep defect density (acceptor type) and the defect density grew from 10 10 to 10 18 cm −3 , J sc and V oc decreased from 16.6 mA cm −2 to 1.12 mA cm −2 , and from 0.78 to 0.23 V, respectively, implying that the studied SCs device behavior reduced significantly because the defects work as recombination centers reducing lifetime and charge mobilities. [ 15 ] The drop in FF is attributed to an increment in recombination processes, which increases solar cell resistance. The effect of TiO 2 /Sb 2 S 3 interface defect in the interval of 10 10 –10 17 cm −3 on the Sb 2 S 3 conventional SC is depicted in Figure 3 b.…”
Section: Resultsmentioning
confidence: 99%
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“…To evaluate the device performance, the effects of deep defect density (acceptor type) and the defect density grew from 10 10 to 10 18 cm −3 , J sc and V oc decreased from 16.6 mA cm −2 to 1.12 mA cm −2 , and from 0.78 to 0.23 V, respectively, implying that the studied SCs device behavior reduced significantly because the defects work as recombination centers reducing lifetime and charge mobilities. [ 15 ] The drop in FF is attributed to an increment in recombination processes, which increases solar cell resistance. The effect of TiO 2 /Sb 2 S 3 interface defect in the interval of 10 10 –10 17 cm −3 on the Sb 2 S 3 conventional SC is depicted in Figure 3 b.…”
Section: Resultsmentioning
confidence: 99%
“…The CBO and VBO values at buffers/Sb 2 S 3 junction are calculated using the following Equation (1 and 2) [ 1,2 ] and shown in Table 6CBO=X(Absorber)X(buffer)$$\text{CBO} = X \left(\right. \text{Absorber} \left.\right) - X \left(\right.…”
Section: Resultsmentioning
confidence: 99%
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