2022
DOI: 10.1016/j.micrna.2022.207289
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Performance enhancement of CIGS solar cells using ITO as buffer layer

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Cited by 14 publications
(3 citation statements)
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“…On the other hand, and oppositely to the top cell, the bottom single solar cell CZTSSe has lower Voc of 529 mV and higher Jsc of 36.98 mA/cm 2 because of its lower band gap energy, which allows absorption of low energy photons (longer wavelength) and leads to increase the photocurrent [30]. Which supports our choice of this type of solar cells compared to those of the CIGS thin film solar cells as reported in [31], to achieve high efficiency.…”
Section: Modeling Of a Cztsse Bottom Cellsupporting
confidence: 76%
“…On the other hand, and oppositely to the top cell, the bottom single solar cell CZTSSe has lower Voc of 529 mV and higher Jsc of 36.98 mA/cm 2 because of its lower band gap energy, which allows absorption of low energy photons (longer wavelength) and leads to increase the photocurrent [30]. Which supports our choice of this type of solar cells compared to those of the CIGS thin film solar cells as reported in [31], to achieve high efficiency.…”
Section: Modeling Of a Cztsse Bottom Cellsupporting
confidence: 76%
“…ZnO and Spiro-OMeTAD are selected as the ETL and the HTL, respectively, from the earlier works, which resulted in obtaining higher efficiency. The front contact electrode, i.e., ITO is used in CIGS-based SCs, and hence, it validates the feasibility of ITO with CIGS materials. The working principle of SC (CIGS/CsSnI 3 ) is represented in Figure b. The absorption coefficient (α) is illustrated from SCAPS-1D software where we utilized the term α = A α ( h ν – E g ) 1/2 .…”
Section: Configuration Details and Computational Methodsmentioning
confidence: 85%
“…Copper indium gallium selenide (CIGS), belonging to the group I-III-VI, has emerged as a highly promising choice for thin-film SCs (TFSCs). This is primarily owing to its excellent conversion efficiency, which has recently surpassed 23% [10] [11] [12]. Additionally, CIGS exhibits remarkable stability, cost-effectiveness, and configurable band gap of roughly 1.01 -1.69 eV [13] [14].…”
Section: Introductionmentioning
confidence: 99%