Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

Abstract

In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

Photoinduced Field-Effect Passivation from Negative Carrier Accumulation for High-Efficiency Silicon/Organic Heterojunction Solar Cells

“…The Q vol value is also dependent on the UV intensity, since stronger intensity induces more negative O 2 – radicals (Figure S6). Therefore, this photoinduced electric field can be modulated by UV, similarly working in the solar cells with the bias voltage …”

“…Therefore, this photoinduced electric field can be modulated by UV, similarly working in the solar cells with the bias voltage. 34 To assess this photoinduced field-effect passivation, τ n of silicon coated with the various layers as functions of UV irradiation duration and intensity were measured systematically, as shown in Figure 4. Under UV soaking, the τ n of silicon deposited by PEDOT:PSS, PEDOT:PSS/PDMS, and PE-DOT:PSS/TiO 2 layers is not changed at all.…”

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

“…Efficiency can also be increased using inversion-layer metal-insulator-semiconductors (IL-MIS) and metal-oxide-semiconductors (MOS) [ 15 , 16 , 17 , 18 , 19 ]. Researchers have reported that the photovoltaic performance of MIS or MOS solar cells (SC) can be enhanced through the application of bias voltage [ 20 , 21 , 22 ]; however, few studies have examined the effects of plasmonic metallic nanoparticles in conjunction with bias voltage on MOS solar cells.…”

Low-dimensional electronic state at the surface of a transparent conductive oxide

“…3 ). Therefore, BSO demonstrates a realistic potential to replace traditional transparent conductive oxides, such as indium-based systems 4 , in optoelectronic technology. Furthermore, both BSO and SSO in thin film form show further improvement in light transparency, electrical conductivity 5,6 , and electron mobility compared to the bulk compounds, which is generally attributed to a low electroneffective mass in the range of 0.2-0.4 m e [7][8][9][10][11] .…”

“…Fig 4. Comparison of the calculated electronic structure of BaSnO 3 slab with different terminations.…”