Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Abstract

To reduce the static power consumption of the NT JLFET and the effect of SCEs on the NT JLFET, A nanotube junctionless field effect transistor with cyclic low doping concentration regions (C NT JLFET) is proposed. Based on Sentaurus TCAD numerical simulations, the electrical properties of the C NT JLFET and the NT JLFET were comparatively investigated, and the effects of the length (LCD) and radius (RCD) of cyclic low doping concentration regions on the electrical properties of the C NT JLFETs were studied. The C NT JLFET reduces the gate-induced drain leakage (GIDL) due to lateral band-to-band-tunneling (L-BTBT) as compared to the NT JLFET. As the LCD or RCD increases, the off-state current decreases. In addition, the C NT JLFET suffers from fewer short channel effects (SCEs), such as threshold voltage roll-off, drain-induced barrier lowering and subthreshold swing deterioration, compared to the NT JLFET. The inhibition of L-BTBT and attenuation of SCEs by cyclic low doping concentration regions remains when the channel length of the C NT JLFET is shortened to 10 nm. The C NT JLFET are suitable for low power applications as they exhibit reduced L-BTBT and suffer from fewer SCEs.