Performance Enhancement of Solution-Processed Organic Memories by Exploiting Synergistic Organic–Inorganic Hybrid Composites

Abstract

Organic−inorganic hybrid composites (HCs) comprising functionalized 2D materials have been given exceptional importance and have been actively employed as memory materials toward development of next-generation resistive memory devices. Herein, we use in situ functionalized rGO−ZnO HC nanofillers for the first time and report the improved memory performances such as a very low operating voltage and a high current ON/OFF ratio along with good repeatability. Hybrid polymer nanocomposite (HPNC) devices were fabricated by dispersing hydrothermally synthesized rGO−ZnO HCs in PMMA that surpass most organic resistive memory and are comparable to inorganic resistive memory in terms of device performances. The memory characteristics of the HPNCs have been modulated and optimized by varying the proportion of hybrid nanofillers. Highly stable and repeatable memory phenomena have been observed for all the devices and the switching voltages were modulated systematically. Very low switching voltages in the range of ∼−0.60 to −0.74 V and high current I ON /I OFF ratio of ≈ 10 6 have been obtained for the device with the loading of 0.5 wt % hybrid nanofillers. The carrier transport mechanism through the devices have been elucidated with the help of a suitable energy band diagram. Our study implies that HPNC materials are excellent candidates for organic memory application and provide useful information about the underlying carrier transport mechanism associated with resistive switching phenomena.

Novel Aminosilane (APTES)-Grafted Polyaniline@Graphene Oxide (PANI-GO) Nanocomposite for Electrochemical Sensor

“…Log i p = 0.46 × Log V − 4.55 (R 2 = 0.98) (6) As given in Equation ( 1), the slope of the plot is 0.46; slopes of <0.5 indicate a fully diffusion-controlled reaction, while those >0.5 indicate adsorption-controlled reactions [51]. For the current study, the observed slope was 0.46, which confirms the reaction is diffusion-controlled.…”

“…The equation of the plot is given in Equation ( 5) with a correlation of 0.99. i p = 30.82 × V 1/2 − 0.29 (R 2 = 0.99) (5) For confirmation of the nature of the electrochemical reaction occurring on the electrode surface, the plot of the logarithm of reduction current response against the logarithm of scan rate was plotted (Figure 4f). The equation of the plot is presented in Equation (6).…”

“…On the other hand, the organic component ensures properties such as low density, tenability and luminescence [ 3 , 4 , 5 ]. The use of 2D materials as components of HOI has gained much attention because it delivers appealing hybrid materials [ 6 ]. Lately, most studies have focused on the use of 2D materials based on carbon, metal oxide and even polymers to fabricate HOI.…”

Copper (II) Phthalocyanine (CuPc) Based Optoelectronic Memory Device with Multilevel Resistive Switching for Neuromorphic Application

“…Thereafter, with subsequent increased in applied voltage, greater than the “set” voltage both the light and without light condition, the slope of the MIM curve is of ≈1.0 and 1.1, respectively, shows an ohmic ( I ∝ V ) variation which very clearly observed in Figure 5g,h. [ 54,55 ] During this, all the trap sites are filled and free electron concentration has increased in such a way that they can easily cross the PMMA barriers and reach to the Ag electrode site (presented in Figure 5i). As the barrier is reduced, electrons start to flow from the ITO to the Ag, causing the device switching from OFF to ON state.…”

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

“…To overcome this bottleneck and increase the calculation speed of such systems, new electronic equipment needs to be developed. For this purpose, resistive random access memory (RRAM) has several potential advantages over traditional electronic devices, such as higher storage density, better stability, and low power consumption [ 2 , 3 ]. The distinctive characteristic of RRAM is that it has different resistance states under different external voltages, enabling its use in many applications, including storage, neural networks, and general memory for computing.…”