Performance enhancement of TaOx resistive switching memory using graded oxygen content

Abstract

We compared the resistive switching performances of built-in graded oxygen concentration TaOx films and uniform TaOx films under the 100 μA compliance current. The device with a graded oxygen concentration demonstrates increased low resistance and high resistance states, as well as improved stability without the need of higher switching voltages. Using the pulse mode, the switching voltages were confirmed to be less than 1.0 V for the pulse widths of 100 ns and 50 ns and less than 3.3 V for that of 10 ns, showing great advantages over previous reports. The remarkably high performances are due to the built-in oxygen concentration gradient, which results in an electric-field gradient and temperature along conduction paths, confining the rupture/reformation of the random conductive filaments to the customized highest oxygen concentration zone.

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite

“…Many perovskite oxide materials, such as SrTiO 3 , BaTiO 3 , SrZrO 3 and BiFeO 3 , have been investigated for their utility in RS memory devices. 4–10 However, these oxide films have several limitations, such as high-temperature processing, complicated process control, and rigid ceramic nature, that prevent their widespread usage. Since the work of Yoo et al in 2015 on RS memory devices, halide perovskite (HP) semiconductors have emerged as one suitable alternative.…”

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory

“…The resistive random access memory (RRAM), as one of the most promising candidates, has attracted more and more attention because of its high density, fast switching speed, high scalability, and low power consumption. − Generally, a typical RRAM device has a simple metal–insulator–metal (MIM) structure in which a resistive switching (RS) layer is sandwiched between two metal electrodes. Various metal oxide materials such as Ta 2 O 5 , − HfO 2 , − ZrO 2 , TiO 2 , − NiO x , − ZnO, − Ga 2 O 3 , − and Fe 2 O 3 have been investigated as RS layers in the past two decades. Ga 2 O 3 has captivated tremendous research interests recently because of its unique properties including high transparency in visible and ultraviolet regions, wide direct bandgap of 4.5–5.0 eV, and good chemical stability. , The use of Ga 2 O 3 as the RS layer has potential in integration with an ultraviolet detector and energy harvesting , with local storage.…”

Ab Initio Simulation of Ta2O5: A High Symmetry Ground State Phase with Application to Interface Calculation

“…Tantalum pentoxide (Ta 2 O 5 ) is a versatile functional dielectric that can be used as electrolytic capacitor, optical modulator, optical coating, high‐K gate dielectric material in microelectronics, and the switching layer in memristors . Despite its wide range of applications, the knowledge of its exact structure is nevertheless still limited.…”