Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer

Tao, Xutang; Liu, Junlin; Zhang, Jianli; Mo, Chunlan; Xu, Ling; Ding, Jie; Wang, Guangxu; Wang, Xiaolan; Wu, Xiaoming; Quan, Zhi; Pan, Shangke; Fang, Fang; Jiang, Fengyi

doi:10.1364/ome.8.001221

Cited by 31 publications

(23 citation statements)

References 39 publications

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“…For sample C, however, randomly distributed dark spots with a diameter of several micrometers are observed. These dark spots appearing in the FLM are considered as In-rich clusters associated with nonradiative areas in the QWs . These unexpected dark spots observed in sample C may come down to the poor crystal quality in the QWs, which has also been confirmed by the X-ray rocking curve (see Figure S3).…”

Section: Results and Discussionsupporting

confidence: 54%

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Liu

et al. 2018

ACS Photonics

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The potential of multicolor semiconductor electroluminescence in solid-state lighting has been extensively pursued due to the energy-saving and smart-lighting as compared to conventional phosphor-converted white light sources. Here, we demonstrate a highly efficient 525 nm GaN-based green light-emitting diode (LED) with a sandwich-like multiple quantum well (MQW) structure grown on patterned Si(111) substrates. Performance enhancement can be achieved by adjusting the thicknesses of the three quantum barriers close to p-GaN in the interior of the sandwich MQW. Samples A, B, and C, with an optimized barrier thickness of 13, 10, and 8 nm, showed peak external quantum efficiency (EQE) values of 55.6%, 56.2%, and 49.0%, respectively. Under normal working conditions (350 mA, current density 35 A/cm2), the output power, EQE, forward voltage, and dominant wavelength of the sample representing the best performance were 306.0 mW, 37.0%, 2.76 V, and 525 nm, respectively. This work might provide an economically feasible way to realize volume-produce of highly efficient InGaN green LEDs on silicon substrates.

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Section: Results and Discussionsupporting

confidence: 54%

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Liu

et al. 2018

ACS Photonics

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“…It consists of dozens of periods of InGaN well layers and GaN barrier layers. The value of the periodicity of the InGaN/GaN structure is defined the SL period number which greatly affects the LED's EQE and forward voltage [20], but its impact on VLC performance is unsure. The enhancement of lighting performance for a LED does not directly indicate the improvement of VLC performance.…”

Section: Introductionmentioning

confidence: 99%

High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

Chen

Zhang

et al. 2021

PhotoniX

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High-speed visible light communication (VLC), as a cutting-edge supplementary solution in 6G to traditional radio-frequency communication, is expected to address the tension between continuously increased demand of capacity and currently limited supply of radio-frequency spectrum resource. The main driver behind the high-speed VLC is the presence of light emitting diode (LED) which not only offers energy-efficient lighting, but also provides a cost-efficient alternative to the VLC transmitter with superior modulation potential. Particularly, the InGaN/GaN LED grown on Si substrate is a promising VLC transmitter to simultaneously realize effective communication and illumination by virtue of beyond 10-Gbps communication capacity and Watt-level output optical power. In previous parameter optimization of Si-substrate LED, the superlattice interlayer (SL), especially its period number, is reported to be the key factor to improve the lighting performance by enhancing the wall-plug efficiency, but few efforts were made to investigate the influence of SLs on VLC performance. Therefore, to optimize the VLC performance of Si-substrate LEDs, we for the first time investigated the impact of the SL period number on VLC system through experiments and theoretical derivation. The results show that more SL period number is related to higher signal-to-noise ratio (SNR) via improving the wall-plug efficiency. In addition, by using Levin-Campello bit and power loading technology, we achieved a record-breaking data rate of 3.37 Gbps over 1.2-m free-space VLC link under given optimal SL period number, which, to the best of our knowledge, is the highest data rate for a Si-substrate LED-based VLC system.

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“…Some literature reported the application of an InGaN underlayer to reduce potential point defects in the underlayer, and therefore, boost MQWs efficiency [ 22 , 23 , 24 ]. Specifically, Jiang’s team [ 25 , 26 , 27 , 28 ] came up with a pre-strained superlattice (SL) structure to solve the phase separation problem and improve the crystalline quality in high indium MQWs, assisting in realizing high performances light-emitting diodes in longer wavelength. However, for laser diodes, GaN free-standing substrates rather than foreign substrates are applied to decrease threading dislocations and improve material quality.…”

Section: Introductionmentioning

confidence: 99%

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Liu

et al. 2021

Materials

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We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

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Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer

Cited by 31 publications

References 39 publications

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

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