Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)

Exploration of Novel Hafnium Oxide (HfO2) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications

“…Increasing values of n i and T i lead to a faster generation of carbon monomers, thus leading to more diffusion of carbon ions. [27][28][29] This leads to an increase in CNT length. PECVD parameters directly influence device performance because they influence device geometry (radius and length).…”

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH3 Gas Detector

“…28,29 There are industrial & medical applications where the proposed structure could be deployed as PH 3 gas detector like environmental monitoring, chemical manufacturing, oil and gas industry, semiconductor manufacturing, breath analysis for disease detection, anesthesia monitoring & monitoring patient exhalation. [22][23][24] The applied gate bias modifies the overall gate-metal-work function by inducing an electric field (for polarising gate-dielectric) for the gas -molecules adsorbing thereupon. 30 The gate metal work function might vary in different ways, which affects the analog performance parameters such as drain current, transconductance etc.…”

“…The phosphine and Arsine gas adsorption changes the work function of the catalytic gold film, which alters the physical parameters for analysing the quantity of adsorbed phosphine. [22][23][24][25][26][27] Chemical groups of gate-stack material that have an affinity for PH 3 , facilitate its adsorption and detection. The proposed device characteristics are simultaneously affected by the change in the gate-metal-work function, therefore I Off , I On and g m variation in the device's is taken into account while calculating the gas sensitivity.…”