Performance Evaluation of High-κ Dielectric Ferro-Spacer Engineered Si/SiGe Hetero-Junction Line TFETs: A TCAD Approach

Panwar, Sourabh; Srivastava, Shobhit; M, Shashidhara; Acharya, Abhishek

doi:10.1109/tdei.2023.3266413

Cited by 5 publications

(1 citation statement)

References 33 publications

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“…However, the conduction current is considerably lower in TFETs than in MOSFETs because performing the band-to-band tunneling (BTBT) process of carriers is much more difficult than performing their thermal injection [5,6]. Many techniques were proposed to enhance TFET oncurrent, including material and structural methods [7][8][9][10][11]. The proposed solutions were based on exploiting the mechanisms of device physics which are more sophisticated in TFETs than in MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Thin-body effects in double-gate tunnel field-effect transistors

Chien,

Thai,

Shih

2024

J. Phys. D: Appl. Phys.

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Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TFETs as Tb is scaled down. Differently from previous beliefs, the on-current degradation in thin-body DG-TFETs is not mainly caused by the volume effect, but rather by a newly defined TBE named lateralization effect. This is because the lateralization of tunneling direction significantly increases tunnel width, whereas the reduction of tunneling volume is quite limited due to narrow tunneling regions. To study the Tb-dependence of current, therefore, the vertical tunneling has to be taken into consideration. When considered as a TBE, the fringing field effect caused by reduction in Tb is not significant in degrading the on-current of thin-body DG-TFETs because the narrow tunneling regions are strongly gate-controlled. The only TBE that enhances the on-current is the coupling effect, but its role is only significant for low-bandgap bodies in which the coupling effect can efficiently promote the tunneling towards the body center. Not as previously thought that the quantum confinement effect (QCE) monotonically increased, it even decreases as Tb decreases down to sub-10 nm before turning to increase, thanks to the space sharing between proximate local quantum wells. A comprehensive understanding of the TBEs is useful for providing design insight, especially for determining the optimal Tb to maximize the on-current.

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