Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes

Wang, Ying; Chen, Ke-Han; Bao, Meng-Tian; Fei, Xin-Xing; Cao, Fei

doi:10.1109/ted.2022.3200625

Cited by 5 publications

(2 citation statements)

References 27 publications

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“…Compared to SiC PIN and junction barrier Schottky (JBS) detectors [11][12][13], the SiC Schottky barrier detectors (SBDs) have fast switching speeds and well-established manufacturing processes. These make it extensive application in environments characterized by high temperatures, high frequencies, and low power consumption [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

He,

Cao,

et al. 2024

Phys. Scr.

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Time response characteristics of α particle detector is crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carrier and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.

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Section: Introductionmentioning

confidence: 99%

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

He,

Cao,

et al. 2024

Phys. Scr.

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“…The thermal annealing of metal-semiconductor contacts represents a crucial, intensely researched step toward obtaining high-quality interfaces and eliminating unwanted, localized defects [1], [5], [8], [9], [10], [11], [12]. The essentially used process of rapid thermal annealing (RTA) was shown to improve the performances of SiC-Schottky contacts [6], [7].…”

mentioning

confidence: 99%

Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts

Pristavu,

Brezeanu,

Dan-Theodor

et al. 2024

IEEE Trans. Electron Devices

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The electrical behavior improvement of nonuniform Ni/4H-SiC Schottky diodes, akin to that caused by thermal annealing, is demonstrated after continuous exposure to high operating temperatures (400 • C). After only the standard rapid thermal annealing (RTA), samples with different contact diameters exhibit barrier height and ideality factor fluctuations, typical for nonuniform contacts. After 2 h at 400 • C, a shift in Schottky barrier is observed, toward a plateau of 1.63 V, constant with temperature and bias, for all investigated structures, with current flow being nearly fully accounted for by single-barrier thermionic emission. Coupled with operational contact area enhancement, this lagging treatment ensures the devices' ability to operate at high temperatures.

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Improving Temperature Stability of Dickson Charge Pump Rectifiers for Battery-Free Wireless Sensing Applications

Hemour

Khazaka

et al. 2023

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

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Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes

Cited by 5 publications

References 27 publications

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts

Improving Temperature Stability of Dickson Charge Pump Rectifiers for Battery-Free Wireless Sensing Applications

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