Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Ferain, I.; Duffy, Ray; Collaert, N.; Dal, M.J.H. van; Pawlak, Bartek; O’Sullivan, Barry; Witters, L.; Rooyackers, R.; Conard, Thierry; Popovici, M.; Elshocht, Sven Van; Kaiser, M.; Weemaes, R. G. R.; Swerts, Johan; Jurczak, M.; Lander, R.J.P.; Meyer, K. De

doi:10.1016/j.sse.2009.03.017

Cited by 7 publications

(5 citation statements)

References 14 publications

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“…1). [8][9][10] They may alter the recrystallization process because regrowth occurs parallel to them rather than terminating at a surface/interface, as is the case of planar devices. 11 In fact, experiments show that in narrow planar ultra-thin silicon-on-insulator devices and FinFETs, regrowth is imperfect and line defects starting at the lateral surfaces/interfaces are formed in the implanted regions, and polycrystalline material is nucleated beyond.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Marqués

Pelaz

Santos

et al. 2012

Journal of Applied Physics

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We use molecular dynamics (MD) simulation techniques to study the regrowth of nanometric multigate Si devices, such as fins and nanowires, surrounded by free surfaces and interfaces with amorphous material. Our results indicate that atoms in amorphous regions close to lateral free surfaces or interfaces rearrange at a slower rate compared to those in bulk due to the discontinuity of the lateral crystalline template. Consequently, the recrystallization front which advances faster in the device center than at the interfaces adopts new orientations. Regrowth then proceeds depending on the particular orientation of the new amorphous/crystal interfaces. In the particular case of (110) oriented fins, the new amorphous/crystal interfaces are aligned along the (111) direction, which produces frequent twining during further regrowth. Based on our simulation results, we propose alternatives to overcome this defected recrystallization in multigate structures: device orientation along (100) to prevent the formation of limiting {111} I amorphous/crystal interfaces and presence of a crystalline seed along the device body to favor regrowth perpendicular to the lateral surfaces/interfaces rather than parallel to them. (C) 2012 American Institute of Physics. [doi :10.1063/1.3679126

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Section: Introductionmentioning

confidence: 99%

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Marqués

Pelaz

Santos

et al. 2012

Journal of Applied Physics

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“…(b) SEM image of a multichannel p-type FinFET, similar to the one used in this work. For more fabrication details, see the Supporting Information and reference . (c) Schematic view of the direct current measurement setup and the potential profile through the channel of the transistor with a single acceptor located in the middle of the channel.…”

mentioning

confidence: 99%

Probing the Spin States of a Single Acceptor Atom

Heijden¹,

Salfi²,

Mol³

et al. 2014

Nano Lett.

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We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a function of magnetic field into four states, which is unique for a single hole bound to an acceptor in a bulk semiconductor. The two lowest spin states are heavy (|m(j)| = 3/2) and light (|m(j)| = 1/2) hole-like, a two-level system that can be electrically driven and is characterized by a magnetic field dependent and long relaxation time, which are properties of interest for qubits. Although the bulklike spin splitting of a boron atom is preserved in our nanotransistor, the measured Landé g-factors, |g(hh)| = 0.81 ± 0.06 and |g(lh)| = 0.85 ± 0.21 for heavy and light holes respectively, are lower than the bulk value.

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“…However, in the case of 3D nanometric multigate devices, SPER is not as straightforward as in bulk Si [87,[117][118][119].…”

Section: Cmd Modelsmentioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Cited by 7 publications

References 14 publications

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Probing the Spin States of a Single Acceptor Atom

Improved physical models for advanced silicon device processing

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