Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO<sub><i>x</i></sub>dopant layer

Jhang, Wun-Ciang; Chen, Pin-Han; Hsu, Chih-Chieh; Nanda, Umakanta

doi:10.1039/d3tc00422h

J. Mater. Chem. C

2023

DOI: 10.1039/d3tc00422h

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Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Wun-Ciang Jhang

Pin-Han Chen

Chih-Chieh Hsu

et al.

Abstract: Oxide semiconductors are promising active layer materials for thin-film transistors (TFTs). In this paper, ZnSnO (ZTO)-based TFTs are demonstrated. The active layers are prepared using a stacked structure of ZTO...

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Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

Büschges,

Trouillet,

Dippel

et al. 2024

Adv Materials Inter

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Thin semiconducting films of magnesium doped indium‐ and tin oxide are prepared by thermal atomic layer deposition (ALD). The metal oxide films are deposited at 200 °C from the precursors trimethylindium, tetrakis(dimethylamido)tin, bis(ethylcyclopentadienyl)magnesium and water as oxidant. These thin‐films are observed to be amorphous by electron microscopy and X‐ray diffraction. However, they exhibited a near‐range atomic order with correlation lengths of up to 10 Å, as demonstrated by high energy total scattering at grazing incidence employing synchrotron radiation. Even minor alterations in composition reveal a significant impact on the thin‐film transistor (TFT) device parameters, due to magnesium's high oxygen binding capability and its ability to inhibit the formation of oxygen vacancies, resulting in a decrease of free charge carriers in the material. Stability tests indicate a device degradation after storage in ambient conditions due to water adsorption on the surface, which could be reversed by an additional annealing step which qualify the films as robust. This studie demonstrate the possibility of employing minor amounts of high band gap oxides such as MgO to manipulate and control the electric behavior of the active channel layer performance in inorganic TFT devices.

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Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

Büschges,

Trouillet,

Dippel

et al. 2024

Adv Materials Inter

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show abstract

Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors

Ryu,

Hwang,

Jeon

et al. 2025

Applied Surface Science

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Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Abstract: Oxide semiconductors are promising active layer materials for thin-film transistors (TFTs). In this paper, ZnSnO (ZTO)-based TFTs are demonstrated. The active layers are prepared using a stacked structure of ZTO...

Cited by 2 publications

References 82 publications

Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors

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Resources

About

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

Abstract: Oxide semiconductors are promising active layer materials for thin-film transistors (TFTs). In this paper, ZnSnO (ZTO)-based TFTs are demonstrated. The active layers are prepared using a stacked structure of ZTO...

Cited by 2 publications

References 82 publications

Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors

Contact Info

Product

Resources

About

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer