Performance Improvement of NO₂ Gas Sensor Using Rod-Patterned Tantalum Pentoxide-Alloyed Indium Oxide Sensing Membranes

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

“…Among several structures of gas sensors, a metal oxide semiconductor (MOS) gas sensor is the most attractive structure due to its inherent advantages of easy fabrication, simple operation, low prices, and a small size [ 3 ]. Many metal oxide semiconductor materials have played promising roles in resistive types of MOS-structured gas sensors, such as zinc oxide (ZnO) [ 4 , 5 ], stannic oxide (SnO 2 ) [ 6 , 7 ], titanium dioxide (TiO 2 ) [ 8 , 9 ], indium oxide (In 2 O 3 ) [ 10 , 11 ], and gallium oxide (Ga 2 O 3 ) [ 12 , 13 ]. Among the metal oxide semiconductor materials, in view of the advantages of non-toxicity, low prices, and good chemical stability [ 14 , 15 ], Ga 2 O 3 has potential applications in high-temperature gas sensors [ 16 , 17 ].…”

Multifunctional Nanohybrid of Alumina and Indium Oxide Prepared Using the Atomic Layer Deposition Technique

“…Nowadays, it is no doubt regarding the importance and multifunction of indium oxides in various electronic and optoelectronic applications, especially transparent conductors (TCOs), transistors, and chemical sensors. − Indeed, nanostructured materials based on In 2 O 3 have been extensively investigated as building components in the past two decades due to their fascinating physical and chemical properties, which have supported overcoming some of the drawbacks in the use of bulk materials, particularly flexibility and transparency. Thus, many growth techniques have been reported for the synthesis of In 2 O 3 and its compounds, such as chemical vapor deposition (CVD), thermal oxidation of In films, sol–gel, and sputtering. ,,,− However, these techniques generally require high processing temperatures with post-treatment (>300 °C) for obtaining high crystalline as well as high electroconducting oxide samples. That does not allow using some polymer substrates, which will be damaged or melted by high temperaturesin other words, those conventional growth methods limited the potential of In 2 O 3 and its composites in many flexible applications …”

Sensing Mechanism and Characterization of NO2 Gas Sensors Using Gold-Black NP-Decorated Ga2O3 Nanorod Sensing Membranes

“…In recent years, several materials have been used to fabricate gas sensors. Among them, metal oxide materials, such as zinc oxide (ZnO), 4,5 indium oxide (In 2 O 3 ), 6,7 tungsten trioxide (WO 3 ), 8,9 and gallium oxide (Ga 2 O 3 ), 10,11 have garnered significant attention due to their low cost, simple fabrication, small size, and ease manipulation. 12−16 In view of their considerable surface-to-volume ratio and more surface gas adsorption sites, nanomaterials and nanostructures are deliberately applied to the gas sensors to improve their performances.…”

“…In recent years, several materials have been used to fabricate gas sensors. Among them, metal oxide materials, such as zinc oxide (ZnO), , indium oxide (In 2 O 3 ), , tungsten trioxide (WO 3 ), , and gallium oxide (Ga 2 O 3 ), , have garnered significant attention due to their low cost, simple fabrication, small size, and ease manipulation. − In view of their considerable surface-to-volume ratio and more surface gas adsorption sites, nanomaterials and nanostructures are deliberately applied to the gas sensors to improve their performances. − In spite of the fact that homojunctions are formed between nanostructures to improve the sensitivity of gas sensors, , the formation of p–n heterojunctions between nanostructures can effectively promote the sensitivity and the resistance change. − Recently, to further enhance the performances of gas sensors by using an enhanced metal spillover phenomenon, the structures of metal-decorated metal oxide nanorods have been extensively studied and developed. − …”