Performance Improvement of the GaSb Thermophotovoltaic Cells With n-Type Emitters

Tang, Liangliang; Fraas, Lewis M.; Liu, Zhuming; Xu, Chang; Chen, Xingying

doi:10.1109/ted.2015.2455075

Cited by 31 publications

(20 citation statements)

References 25 publications

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“…An output power density of 0.26 W/cm 2 was realized for a single GaSb-based TPV cell under an operating SiC radiator of 1223 K temperature. [50,51,136]. In 2015, they reported that the performance of GaSb TPV cell can be improved using n-type emitters at the front-side of the TPV cell active area with PC1D software simulation [51].…”

Section: Performance Of Gasb-based Tpv Cellmentioning

confidence: 99%

“…Non-epitaxial growth can be sub-categorized into two: diffusion method and ion implantation method. Diffusion method is commonly used to fabricate GaSb TPV cell [ 49 , 50 , 51 ] and InGaAs [ 52 ]. The conventional diffused GaSb-based TPV cell is manufactured in a pseudo-closed box (PCB) with the diffusion of Zn particle into Tellurium-doped single-crystal GaSb substrate [ 53 ].…”

Section: Tpv Cell Fabricationmentioning

confidence: 99%

“…Research efforts towards maximizing the conversion efficiency have been drastically increased in recent years. Improvements in terms of spectral control [ 137 ], metal contact [ 138 , 139 , 140 , 141 , 142 ] as well as optimization on the layer thickness [ 51 , 92 , 117 ] and doping concentrations [ 50 , 51 , 143 , 144 ] are the major topics reported from various works.…”

Section: Gasb-based Tpv Cellmentioning

confidence: 99%

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A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

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Section: Performance Of Gasb-based Tpv Cellmentioning

confidence: 99%

Section: Tpv Cell Fabricationmentioning

confidence: 99%

Section: Gasb-based Tpv Cellmentioning

confidence: 99%

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A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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“…Zn diffusion in GaSb has been investigated intensively due to the important application in GaSb TPV cells [14][15][16][17][18]. In our previous study, the similar Zn diffusion phenomenon in GaSb have been found as that in GaAs [19].…”

Section: Zn Diffusion In Gasbmentioning

confidence: 55%

The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

Tang¹,

Liu³

2016

IJMSA

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Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

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“…The bandgap and effective density values were taken from the literature [31], [35]. The mobility values were taken from measurements made during the doping calibration stage, fitted to a simple impurity-dependent model [36]. The parameters extracted from these simulations are listed in Table III.…”

Section: Gasb-on-si Hybrid Solar Cellmentioning

confidence: 99%

GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

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Performance Improvement of the GaSb Thermophotovoltaic Cells With n-Type Emitters

Cited by 31 publications

References 25 publications

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

GaSb-based solar cells for multi-junction integration on Si substrates

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