For energy-efficient thin-film solar cells, photovoltaic
researchers
are investigating alternative strategies like metallic nanostructures
supporting plasmon resonance and ultrathin coatings of antireflective
materials to minimize optical absorption loss. To reduce the reflection
losses from the surface of the solar cells (SCs), optimizing the dimensions
of the metallic nanostructures and antireflection coating (ARC) is
essential. A systematic step-by-step approach is used to gain scientific
insights
into improving the planar GaAs SC performance. In this article, device
performance optimization of a solar cell was studied with five distinct
architectures, namely, planar GaAs, GaAs with metal nanoparticle (MNP)
on top, GaAs coated with ARC, GaAs with MNP over ARC, and GaAs with
MNP embedded in ARC using the finite element method. To analyze the
effect of ARC thickness and MNP size on optical characteristics, the
optical short-circuit current density (J
opt) is computed using absorptance data as the performance parameter.
We used various metals on the GaAs/Al architecture to choose MNP materials,
and titanium (Ti) nanoparticles were chosen because they have the
maximum Jopt. For ARC, we have chosen three oxides, Ta2O5, MoO3, and ZnO, and two polymeric
materials, P3HT and PEDOT:PSS. We have compared the optical performance
of the different optimized architectures using J
opt, absorption spectra, electric field, and photogeneration
rate. This exhaustive analysis shows that Ti MNPs with a diameter
of 180 nm and P3HT ARC with an 80 nm thickness, placed over GaAs planar
structure, deliver maximum J
opt values
of 29.87 and 27.67 mA/cm2, respectively. Further, to understand
the dual impact of plasmons and ARC, we simultaneously varied the
MNP size and the ARC thickness and found that GaAs planar structure
coated with 10 nm thick MoO3 and Ti plasmon with diameter
of 160 nm has the best J
opt of 29.66 mA/cm2. Secondly, we embedded Ti plasmons of 60, 120, and 180 nm
diameters into the ARC film and found that MNPs enhance photocurrent.
It is observed that Ti MNPs with an optimized diameter of 180 nm embedded
in a 40 nm thick MoO3 ARC and placed directly over the
GaAs structure deliver the highest J
opt of 30.45 mA/cm2. This comprehensive analysis can help
researchers to improve the GaAs SC efficiency using the combined effect
of geometrically optimized ARCs and MNPs.