Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Lesecq, Marie; Fouzi, Y.; Abboud, A.; Defrance, N.; Vaurette, Francois; Ouendi, Saliha; Okada, Étienne; Portail, M.; Bah, M.; Alquier, Daniel; Dejaeger, J.C.; Frayssinet, Éric; Cordier, Y.

doi:10.1016/j.mee.2023.111998

Microelectronic Engineering

2023

DOI: 10.1016/j.mee.2023.111998

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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq

Y. Fouzi

A. Abboud

et al.

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2024

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Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H -SiC single crystals

Holiatkina,

Solodovnyk,

Laguta

et al. 2024

Phys. Rev. B

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This work focuses on unraveling electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) properties of n-type 6H silicon carbide (SiC) single crystals with high concentrations of uncompensated nitrogen (N) donors, which is essential for fundamental understanding of spin-related phenomena, developing spin-based devices, optimizing materials and devices, and advancing research in quantum information and spintronics. Utilizing low-temperature multifrequency EPR spectroscopy (9.4–395.12 GHz), we identified two intense signals labeled as S line and S1 line in the 6H-SiC crystals with ND–NA≈8×1018 and 4×1019cm−3. In addition, in 6H-SiC crystals with ND–NA≈8×1018cm−3, a low-intensity triplet from N donors substituting the quasicubic “k2” nonequivalent position (Nk2) was observed. The S line [g⊥=2.0029(2),g∥=2.0038(2)] was assigned to the exchange interaction of conduction electrons and Nk2, while the S1 line [g⊥=2.0030(2),g∥=2.0040(2)] is caused by the exchange spin coupling of localized N donors at the “k1” and “k2” positions. The S1 line was observed in high-frequency EDMR spectra of 6H-SiC with ND–NA≈8×1018cm−3, and its emergence was explained by an enhancement of the hopping conductivity due to the EPR-induced temperature increase mechanism. No EDMR spectra were found to occur in the 6H-SiC crystals with ND–NA≈4×1019cm−3, which is close to the critical donor concentration value for a semiconductor-metal transition. Thus it can be concluded that this N donor concentration is too high for the appearance of spin-dependent scattering and too low for the emergence of EPR-induced hopping mechanisms in 6H-SiC. Published by the American Physical Society 2024

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Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H -SiC single crystals

Holiatkina,

Solodovnyk,

Laguta

et al. 2024

Phys. Rev. B

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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Cited by 1 publication

References 8 publications

Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H -SiC single crystals

Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H -SiC single crystals

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