Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Chung, Ho Young; Kim, Su Jin; Kim, Tae Geun

doi:10.1016/j.spmi.2014.07.046

Cited by 8 publications

(3 citation statements)

References 44 publications

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“…LEDs have attracted much attention since the achievement of light emission in the visible region of the electromagnetic spectrum [ 4 ]. The high brightness and low energy consumption compared with conventional lighting devices are the most favorable characteristics of LEDs [ 5 , 6 , 7 ]. SP enhancement has been successfully applied to QW-LEDs as well as organic LEDs.…”

Section: Introductionmentioning

confidence: 99%

“…The high-efficiency LEDs using this approach have the potential to replace the conventional lighting devices, but far more research is needed to realize high efficiency and cost-effective LEDs for practical applications. SPs serve various purposes in LEDs such as the enhancement of the emission efficiency, increasing the light extraction efficiency, the polarization of the emitted light, speed modulation, and increasing the color conversion efficiency [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

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Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances

et al. 2021

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Surface plasmon (SP)-enhanced quantum-well (QW) LEDs have proved their potential in replacing conventional lighting devices for their high-performance capabilities in ultraviolet (UV), blue and green spectral ranges. The SP-enhanced QW-LEDs have applications in light emission enhancement, light polarization, color conversion, and speed modulation. The electric field of the plasmonic mode of a metal couples with the exciton energy of QWs in resonance results in efficiency enhancement to several folds. The strength of the SP–QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN. The use of an appropriate dielectric interlayer between the metal and the p-GaN allows further control over SP resonance with QW emission wavelength. The penetration depth defines the p-GaN thickness and the QW period number for effective SP–QW coupling. The optimization of these parameters is key to achieve high efficiencies in SP-enhanced QW-LEDs for various applications. This review explains the SP enhancement mechanism and the key challenges facing the SP enhancement of QW-LEDs. The main factors that affect the SP–QW coupling have been explained in detail based on recent reports devoted to this field.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances

et al. 2021

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“…Yu et al [11] applied the AlGaN/InGaN superlattice EBL structure to control effective potential height and improve light output power and current spreading at high current injection. Chung et al [12] reported IQE improvement when applying a v-shaped EBL to a blue LED to reduce the polarization effects. Kuo et al [13] used the AlGaInN quaternary system for the EBL in LEDs to improve IQE and suppress efficiency droop.…”

Section: Introductionmentioning

confidence: 99%

Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Park

Kim

2015

Appl. Phys. A

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In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an Al 0:1 Gal 0:9 N last quantum barrier and an Al 0:21 Gal 0:79 N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

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Carrier transport improvement in ZnO/MgZnO multiple-quantum-well ultraviolet light-emitting diodes by energy band modification on MgZnO barriers

et al. 2020

Optics Communications

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Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition

Cited by 8 publications

References 44 publications

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances

Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Carrier transport improvement in ZnO/MgZnO multiple-quantum-well ultraviolet light-emitting diodes by energy band modification on MgZnO barriers

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