Performance Improvements of Selective Emitters by Laser Openings on Large-Area Multicrystalline Si Solar Cells

Wang, Sheng Shih; Ho, Jyh-Jier; Liou, Jia Jhe; Ho, Jia Show; Hsu, Wei Chih; Lu, Wen Haw; Tsai, Song Yeu; Hung, Hsien Seng; Wang, Kang L.

doi:10.1155/2014/291904

Cited by 6 publications

(6 citation statements)

References 14 publications

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“…Experimental measurements show that, owing to the difference in emitter between SE2 and SE6, higher FF compensates for a slightly lower SC . The best value of 16.20% and EQE of 78.42% were obtained for the SE2 cell, which is better than that of our previous study by two-step POCl 3 diffusion where values of and EQE are 15.95% and 68.6%, respectively [15]. For the optimal SE2 cell of one-step process in this research, the improvement ratios are 1.57% for and 14.32% for EQE as compared with the two-step process.…”

Section: Se3 and Se6contrasting

confidence: 71%

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Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion

Wang

Liou

et al. 2015

International Journal of Photoenergy

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In order to simplify process procedure and improve conversion efficiency (η), we present new steps of laser opening and one-step POCl3diffusion to fabricate selective emitter (SE) solar cells, in which heavily doped regions (HDR) and lightly doped regions (LDR) were formed simultaneously. For HDR, we divided six cells into two groups for POCl3diffusion with sheet resistance (RS) of 40 Ω/sq (for group A) and 50 Ω/sq (for group B). The dry oxidation duration at a temperature of 850°C was 18, 25, and 35 min for the 3 different cells in each group. This created six SE samples with differentRSpairings for the HDR and LDR. The optimal cell (sample SE2) withRSvalues of 40/81 Ω/Sq in HDR/LDR showed the bestηof 16.20%, open circuit voltage (VOC) of 612.52 mV, and fill factor (FF) of 75.83%. The improvement ratios are 1.57% forηand 14.32% for external quantum efficiency (EQE) as compared with those of the two-step diffusion process of our previous study. Moreover, the one-step laser opening process and omitting the step of removing the damage caused by laser ablation especially reduce chemistry pollution, thus showing ecofriendly process for use in industrial-scale production.

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Section: Se3 and Se6contrasting

confidence: 71%

“…In our previous research [15], two-step POCl 3 diffusions and laser opening were adopted on the large-area multicrystalline silicon (mc-Si) solar cells to improve the SE performance. That gives an optimal conversion efficiency of 15.95% and external quantum efficiency (EQE) of 68.6%.…”

Section: Introductionmentioning

confidence: 99%

Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion

Wang

Liou

et al. 2015

International Journal of Photoenergy

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“…The area melting Si surface rely heavily on power laser. Indeed, a higher power laser can create a craks or even grooves and a larger diameter in opening regions [27]. This generates more damage and thus decreases the lifetime.…”

Section: Optimization Of Laser Dopingmentioning

confidence: 99%

Investigation of laser doping on the formation of selective emitter solar cells

Meziani,

Moussi,

Chaouchi

et al. 2023

Preprint

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We investigated laser parameters for a laser doping (LD) process that enables to improve cell characteristics through the formation of a selective emitter (SE) multicrystalline silicon solar cell. In this work, the aim is the formation of SE with an investigation of the effect of critical LD parameters, such as laser power and laser speed. The LD 532 nm is used to obtain highly doped regions and deep doping depth that will receive the screen printed silver grid contact. The optimized laser power and speed of 80%, 500 mm/s, induced the activation of the phosphorus dopant and its diffusion in the silicon then leads to a local decrease of the emitter sheet resistance from 60 Ω/sqr to 30 Ω/sqr. Moreover, it was determined by SIMS and ECV measurements that the dopant concentration increased and the doping depth became deeper in the selective emitter formed by increasing laser power and/or laser speed. Fortunately, the surface cracks damage were not observed. The only damage caused by laser irradiation evidenced by debris and a melted surface. We have successfully developed SE p-type mc-Si 4 inch wafer produced by CRTSE solar cell with FF significantly improved of 1.01%. The conversion efficiency of solar cells with selective emitter formed by LD was increased. This gain is due to improved short-circuit current density and open-circuit voltage.

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“…La lly excess dop re 2. This pro egion of the sp sing highly dop f this procedure ure for a cell (a) b con solar cells ity carrier lifet tions while the standard devi e of highly dop have been use nt of the devic ve emitter was laser grooved b this application he regions just ocesses in a s in coating proc aser melting is pant precursor cess has been pectrum [8,9]. ped p-type reg e has yet to be p before and (b) af is in the prope imes remain h e carrier lifetim ices optimize a ped regions jus d in a variety ce through the developed by buried contact n [7].…”

Section: Lamentioning

confidence: 99%

Overview of laser processing in solar cell fabrication

2014

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This paper will provide an overview of various laser processing techniques used in the fabrication of solar cells. There are numerous applications of lasers including laser doping, annealing, patterning, drilling and welding that vary based on material system (e.g. silicon wafer, polycrystalline thin-film) and the cell architecture. Laser annealing has been identified as a potential route to high quality thin-films for polycrystalline semiconductors such as CdTe and Cu(In,Ga)(Se,S) 2 . Also for thin-film solar cell technologies, including amorphous-silicon, laser patterning has been widely adopted within the industry for creating monolithic interconnections and performing edge isolation. For silicon wafer based technologies there are a number of promising laser processing techniques, however most of these techniques are still in the development stages and are not yet incorporated into industrial production lines. These techniques that represent the next generation of high-efficiency crystalline silicon devices, include laser-fired contacts, laser doping of selective emitters, laser drilling for "wrap-through" device structures, and laser grooved buried contacts. This paper will present a review of each technique, the specific processing applications and the current state of development.

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Performance Improvements of Selective Emitters by Laser Openings on Large-Area Multicrystalline Si Solar Cells

Cited by 6 publications

References 14 publications

Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion

Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion

Investigation of laser doping on the formation of selective emitter solar cells

Overview of laser processing in solar cell fabrication

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