Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

doi:10.1016/j.spmi.2016.04.016

Cited by 88 publications

(25 citation statements)

References 12 publications

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“…One is to improve the integration, multi-gate FETs [1][2] is impressive in sub-30nm technology nodes. The other is the performance promotion, novel devices are purposefully developed, among which TFET is the most representative [3][4][5][6][7][8][9][10][11]. Unfortunately, it is difficult to make the abrupt junction at a small size.…”

Section: Introductionmentioning

confidence: 99%

A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor

Liu

Wang

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Different from Schottky barrier (SB) MOSFET which use lower Schottky barrier to produces the thermionic emission current, the proposed HSB-BTFET utilizes higher Schottky barrier to minimize the thermionic emission current and adopts bilateral gate to generate a strong band-to-band tunneling (BTBT) current which works as the conduction mechanism of the forward current. An assistant gate is introduced which efficiently blocks the reverse biased leakage current. Compared to SB MOSFET, HSB-BTFET can realize lower subthreshold swing, much smaller leakage current, higher Ion-Ioff ratio, compared to TFET, it can realize larger forward current. Besides the device symmetry, it's more compatible with MOSFET technology. The function and influence of the Schottky barrier height have been analyzed.

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Section: Introductionmentioning

confidence: 99%

A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor

Liu

Wang

et al. 2020

IEEE J. Electron Devices Soc.

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“…Based on the gate-controlled tunnel diodes, the common planar TFETs have the smaller on-state current and complex heavy doping processes, and the silicon material have the indirect band gap and larger forbidden band width, which can limit the large-scale application of planar silicon-based TFETs [12]. Researchers have designed some new structure TFET devices for solving this problem, such as the hetero-junction TFET (HTFET) [13], U-channel TFET (UTFET) [14], and doping-less TFET (DLTFET) [15]. The HTFET can effectively decrease the tunneling barrier width, thereby increasing the band tunneling efficiency.…”

Section: Introductionmentioning

confidence: 99%

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

et al. 2020

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The device structure of DLTFET is optimized by the Silvaco TCAD software to solve the problems of lower on-state current and larger miller capacitance of traditional doping-less tunneling field effect transistors (DLTFETs), and the performance can be greatly improved. Different from the traditional DLTFETs, the source region and pocket region of the doping-less TFET with the Ge/SiGe/Si hetero-junction and hetero-gate dielectric (H-DLTFET), respectively, use the narrow band-gap semiconductor Ge and SiGe materials, and the channel and drain region both use the silicon material. The H-DLTFET device use the Ge/SiGe hetero-junction engineering to decrease the tunneling barrier width, increase the band-to-band tunneling current, and obtain the higher current switching ratio and ultra-low sub-threshold swing (SS). Besides, the gate dielectric under auxiliary gate uses the low-k dielectric SiO2 material, which can effectively reduce the miller capacitance and improve the capacitance and frequency characteristics. The on-state current, switching ratio, trans-conductance, output current, and output conductance values of H-DLTFET can be increased by two, two, one, one, and one order of magnitude when compared with the DLTFET, respectively. Meanwhile, the point SS and average SS, respectively, decrease from 13 mV/Dec and 31.6 mV/Dec to 5 mV/Dec and 14.3 mV/Dec, and the gate-drain capacitance decrease from 0.99 fF/μm to 0.1 fF/μm. Besides, the cutoff frequency and gain bandwidth product of H-DLTFET are much larger than that of DLTFET, which can be explained by the excellent DC characteristics. The above simulation results show that the H-DLTFET has the better frequency characteristics, so it is more suitable for applications of ultra-low-power integrated circuits.

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“…The new device structures that have been researched include multi-gate devices that improve electrostatic characteristics [9], ultrathin silicon-on-insulator (UTSOI) MOSFETs [10], gate-all-around (GAA) MOSFETs [11], and Fin field-effect transistors (Fin-FETs) [12]. Device performance can also be improved by using narrow bandgap semiconductor materials, high-k gate dielectric materials such as III-V-based and Si 1-x Ge x -based devices [13,14], and tunneling field-effect transistors (TFETs) [15,16]. TFETs have a lower SS value and off-state current, so they can obtain a larger voltage gain and noise margin in inverter circuit applications [17].…”

Section: Introductionmentioning

confidence: 99%

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

et al. 2019

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In this paper, a novel doping-less tunneling field-effect transistor with Si0.6Ge0.4 heterojunction (H-DLTFET) is proposed using TCAD simulation. Unlike conventional doping-less tunneling field-effect transistors (DLTFETs), in H-DLTFETs, germanium and Si0.6Ge0.4 are used as source and channel materials, respectively, to provide higher carrier mobility and smaller tunneling barrier width. The energy band and charge carrier tunneling efficiency of the tunneling junction become steeper and higher as a result of the Si0.6Ge0.4 heterojunction. In addition, the effects of the source work function, gate oxide dielectric thickness, and germanium content on the performance of the H-DLTFET are analyzed systematically, and the below optimal device parameters are obtained. The simulation results show that the performance parameters of the H-DLTFET, such as the on-state current, on/off current ratio, output current, subthreshold swing, total gate capacitance, cutoff frequency, and gain bandwidth (GBW) product when Vd = 1 V and Vg = 2 V, are better than those of conventional silicon-based DLTFETs. Therefore, the H-DLTFET has better potential for use in ultra-low power devices.

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Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

Cited by 88 publications

References 12 publications

A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor

A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

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