Performance Limit of Ultrathin GaAs Transistors

Abstract

High-electron-mobility group III–V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the III–V family due to its advantage of both good n- and p-type device performance. Monolayer (ML) GaAs is the limit form of ultrathin GaAs. Here, a hydrogenated ML GaAs (GaAsH2) FET is simulated by ab initio quantum-transport methods. The n- and p-type ML GaAsH2 metal–oxide–semiconductor FETs (MOSFETs) can well satisfy the on-state current, delay time, power dissipation, and energy–delay product requirements of the International Technology Roadmap for Semiconductors until the gate length is scaled down to 3/4 and 3/5 nm for the high-performance/low-power applications, respectively. Therefore, ultrathin GaAs is a prominent channel candidate for devices in the post-Moore era. The p-type ML GaAsH2 MOSFETs with a 2% uniaxially compressive strain and the unstrained n-type counterparts have symmetrical performance for the high-performance application, making ultrathin GaAs applicable for complementary MOS integrated circuits.

Discovery of Clustered-P1 Borophene and Its Application as the Lightest High-Performance Transistor

“…For 3 nm devices, the ON-to-OFF current ratio is observed to be more than 4 decades, which is remarkable. As most of the 2D material-based transistors in the literature are simulated with relaxed OFF current criteria ( I OFF = 100 nA/μm), we are able to compare our results with only a few other studies. ,− The I ON for CP1 borophene MOSFETs is well balanced compared to the transistors based on monolayer β-TeO 2 and SiP; however, the 12 nm monolayer GeC-based transistor shows comparatively balanced I ON . On the other hand, for L CH = 5 nm, I ON of CP1 borophene MOSFET is more nicely balanced than that of Zr–Zr–C–O–O and Ti–Zr–C–O–O Schottky barrier transistors.…”

“…The combined DFT-NEGF (non-equilibrium Green’s function)-based methodology, such as the one implemented in the QuantumATK package, has become prominent for exploring 2D material-based transistor characteristics. − However, this methodology can become computationally prohibitively expensive when employed with hybrid functionals such as HSE. Apart from that, the Brillouin zone of clustered-P1 borophene, shown in Figure d, is not orthogonal, and QuantumATK is not adaptable to such crystal structures.…”

One dimensional MOSFETs for sub-5 nm high-performance applications: a case of Sb2Se3 nanowires

“…In order to find out the key factors affecting I on , the interrelationship between the effective mass ( m *) and I on of different 1D and 2D semiconductor FETs with 5 nm gate length, including the Te nanowires, 19 carbon nanotubes, 8 the monolayer black phosphorus (BP), 49 GaAsH 2 , 13 Bi 2 O 2 Se, 52 tellurene, 48 InSe, 40 AsP, 39 antimonene, 53 arsenene, 53 GaN, 54 WSe 2 55 and MoS 2 , 56 is shown in Fig. 5(a).…”

Strain Benefits of Monolayer α‐GeTe and its Application in Low‐Power Metal–Oxide–Semiconductor Field‐Effect Transistors

“…Finally, we compared the main performance of the commonly studied 2D semiconductors for the ultrashort LP MOSFETs. The scaling behaviors of the representative 5 nm GeSe, [ 42 ] InSe, [ 43 ] MoS 2 , [ 44 ] silicane, [ 45 ] GaAs, [ 46 ] and blue phosphorene [ 47 ] MOSFETs from the first‐principle transport simulations are shown in Figure . It can be seen that the on‐state currents of InSe, strained α‐GeTe, MoS 2 , silicane, GaAsH 2 and blue phosphorene satisfy the ITRS LP standards, and several SS values are below 60 mV decade −1 .…”