Performance of a new Schottky CdTe detector for hard X-ray spectroscopy

Matsumoto, Chiho; Takahashi, Tadayuki; Takizawa, K.; Ohno, Ryoichi; Ozaki, Tsutomu; Mori, Kunishiro

doi:10.1109/23.682421

Cited by 129 publications

(48 citation statements)

References 11 publications

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“…In the above-cited works [5][6][7] the electric field strength in the detector is determined by dividing the applied voltage by crystal thickness rather than by the Schottky layer width. For the diodes in our investigation this approach is inapplicable since the depletion layer width determined by Eq.…”

Section: The Barrier Region Width Of the Schottky Diode In A Semi-insmentioning

confidence: 99%

“…The results presented in a number of publications by T. Takahashi et al [5][6][7] indicated a considerable improvement of a CdTe detector characteristic as a result of employment of an In/p-CdTe Schottky diode. This achievement allowed for manufacturing of high-energy photon CdTe detectors without implementation of any electronic schemes for signal processing [8].…”

mentioning

confidence: 91%

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Efficiency spectrum of a CdTe X‐ and γ‐ray detector with a Schottky diode

Kosyachenko

Maslyanchuk

2005

phys. stat. sol. (c)

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A study on the efficiency spectrum of CdTe X-and γ-ray detectors utilizing Schottky diodes for different material parameters and diode structures is reported. Special attention is paid to the effect of deep levels and compensation on space-charge region width. It is shown that charge collection in the neutral region of the detector considerably contributes to the device efficiency. Calculations also show that the efficiency of a stacked detector can be higher than that of a bulk detector with ohmic contacts.1 Introduction The effective operation of X-and γ-ray detectors in a spectrometric mode implies full collection of charge generated by the absorbed high-energy photon. It is known that the carrier lifetime in the purest and most perfect CdTe crystals does not exceed several microseconds. Therefore, in order to prevent capture or recombination of carriers, a bias voltage 100-400 V has to be applied to a several millimeters thick semiconductor chip. The high bias voltage imposes another critical requirement to the detector material: the conductivity of the CdTe crystal should be semi-intrinsic, otherwise a considerable dark current will deteriorate the energy resolution of the device.In the late 1990s, the previously proposed idea of using a diode structure in X-and γ-ray detectors [1-4] has undergone further elaboration. The results presented in a number of publications by T. Takahashi et al. [5][6][7] indicated a considerable improvement of a CdTe detector characteristic as a result of employment of an In/p-CdTe Schottky diode. This achievement allowed for manufacturing of high-energy photon CdTe detectors without implementation of any electronic schemes for signal processing [8]. Nevertheless, a number of questions on the Schottky barrier role and material requirements still remain unclarified. The present paper analyzes spectral response of a CdTe detector utilizing a Schottky diode.

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Section: The Barrier Region Width Of the Schottky Diode In A Semi-insmentioning

confidence: 99%

mentioning

confidence: 91%

Efficiency spectrum of a CdTe X‐ and γ‐ray detector with a Schottky diode

Kosyachenko

Maslyanchuk

2005

phys. stat. sol. (c)

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“…For a p-type CdTe V bip = 0.35V according to equation (4). When an external voltage V ext is applied in reverse bias to the M-S junction, as shown in Fig.…”

Section: Fig 2 Energy Band Diagram Of Au and A P-type Cdte Contactmentioning

confidence: 99%

“…However, the resistivity of available CdTe crystals for radiation detector applications is typically in the order of 10 9 Ώcm and they suffer from a large leakage current when high bias voltages are applied. The most commonly adopted method to suppress the leakage current in a CdTe detector is to form Schottky barrier, using metal material contacts with high work function on the crystal [4]. To suppress deep levels, compensations by Indium/Chlorine dopants are used.…”

Section: Introductionmentioning

confidence: 99%

Metal-Semiconductor Heterojunction Role in CdTe Detectors

Grmela¹,

Šik²

2013

Acta Electrotechnica Et Informatica

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“…It usually has been attempted to suppress the leakage current by making the detectors as Schottky structure. Since the surface layer plays an important role in interface properties, thermal treatments [1] are carried out in vacuum with different time durations and temperatures before depositing indium electrode to form the Schottky contact. Surface layers have been studied using Raman scattering, photoluminescence (PL) and I-V measurements.…”

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confidence: 99%

The Variation of Surface Leakage Current after Thermal Treatment for CdTe

Choi

Kim

et al. 2002

phys. stat. sol. (b)

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After CdTe wafers are polished mechanically and chemically, wider, narrower bands are observed at 1.4 and 1.54 eV by photoluminescence (PL), respectively. The samples are annealed in a vacuum evaporator before depositing the electrode. Thermal annealing depending on time duration and temperature shows a change of the ratio of I/I(A 0 , X) (intensity ratio of the bands to that of emission from excitons trapped by neutral acceptons). The PL intensity ratio of these bands is reduced by optimum annealing conditions. Raman scattering and I-V characteristics are also measured.Introduction CdTe compound semiconductor is recognized as the promising material for X-ray and g-ray detectors operating at room temperature. It is known that the charge collection efficiency of the detectors can be improved by applying a high bias voltage, but the large leakage current of a CdTe detector in MSM (metal-.semiconductor-.metal) configuration limits its operating voltage. It usually has been attempted to suppress the leakage current by making the detectors as Schottky structure. Since the surface layer plays an important role in interface properties, thermal treatments [1] are carried out in vacuum with different time durations and temperatures before depositing indium electrode to form the Schottky contact. Surface layers have been studied using Raman scattering, photoluminescence (PL) and I-V measurements.

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Performance of a new Schottky CdTe detector for hard X-ray spectroscopy

Cited by 129 publications

References 11 publications

Efficiency spectrum of a CdTe X‐ and γ‐ray detector with a Schottky diode

Efficiency spectrum of a CdTe X‐ and γ‐ray detector with a Schottky diode

Metal-Semiconductor Heterojunction Role in CdTe Detectors

The Variation of Surface Leakage Current after Thermal Treatment for CdTe

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