Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature

Abstract

An AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor ͑pHEMT͒ with double ␦-doping carrier supply layers was fabricated and characterized. Estimates of typical device characteristics ͑extrinsic transconductance ͑g m ͒, drain current density ͑I D ͒, threshold voltage ͑V th ͒, current gain cut-off frequency ͑ f T ͒, maximum frequency of oscillation ͑ f max ͒, noise behavior, and large signal measurements͒ were made. A series of experiments was conducted to assess the effects of temperature on pHEMT. A peak g m of 161 mS/mm was obtained from the fabricated pHEMT with a gate length of 1 m for room-temperature operation. The transistor characteristics showed evidence of high breakdown voltages. With respect to the variation in two-terminal gatedrain breakdown voltage, this device had a positive temperature coefficient from 300 to 450 K, and a negative temperature coefficient at temperatures surpassing 450 K. Strikingly, high-frequency on-wafer measurements on the fabricated pHEMT were made up to 400 K, revealing nearly no change in f T . Not only was the device characterized and the complicated mechanisms at various temperatures elucidated, but also the favorable potential of the presented pHEMT for high-temperature and high-frequency applications was determined.

Characterization of the Interface of Gold and Silver Nanostructures on InP and GaAs Synthesized via Galvanic Displacement

“…1 The primary advantages of GaAs and InP, both direct band gap (III-V) semiconductors, over silicon arise from their electrical properties, including higher electron mobility, lower turn-on voltages, and higher breakdown voltages. [1][2][3][4][5][6] The superior properties of GaAs and InP are integral to the materialization of new commercial markets, in areas such as next generation mobile phones, satellite communication and photovoltaics.…”

“…The use of III−V compound semiconductors has emerged into a multibillion dollar industry since these materials meet system performance requirements not attainable with silicon and germanium . The primary advantages of GaAs and InP, both direct band gap (III−V) semiconductors, over silicon arise from their electrical properties, including higher electron mobility, lower turn-on voltages, and higher breakdown voltages. – The superior properties of GaAs and InP are integral to the materialization of new commercial markets, in areas such as next generation mobile phones, satellite communication and photovoltaics.…”

Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers

“…The respective noise margins, i.e. NM H and NM L , are expressed as NM H = V OH -V IH [2] NM L = V IL -V OL [3] The above integrated devices employ the device C as a driver transistor and the devices A1, A2, A3 and A4 as active load transistors.…”

“…Over the past years, high electron mobility transistors (HEMTs) based on the AlGaAs/GaAs and AlGaAs/InGaAs heterostructures had paid attention to high-speed digital and high-frequency microwave circuits, due to the extremely high mobility of two-dimensional electro gas (2-DEG) accumulating at heterojunction. [1][2][3] For the presence of 2DEG, the depletion-mode (D-mode) operation becomes a wellknown obstacle in achieving normal-off device. Moreover, the normalon nature brings about undesired harassment on device and circuit operations, such as extra-power dissipation at idle operated time.…”

Characteristics of an electroless plated-gate transistor

“…1 Physically, energy band alignment at the MS interface aligns the bands naturally with each other, i.e., a phenomenon commonly referred to as the Mott-Schottky limit, which maintains the energy distance of each band from the vacuum level at the interface. 2 However, in practice, the metal Fermi level easily tends to align with a characteristic energy position of the semiconductor which causes the independence or weak dependence of Schottky barrier height on the metal work function.…”