Performance of CZTSxSe1−x solar cell with various mole fractions of sulfur for different buffer layers

Saha, Swarna; Rafique, Zubair Ebne; Hassan, Muhammad

doi:10.1109/icdret.2016.7421479

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…Parameters for the simulation of CG 1Àx Cr x ST/In 2 S 3 /AZO heterojunction solar cells structures. [41,42,73,74] Layer parameters CG 1Àx Cr x ST [3] In 2 S 3 [43] AZO [73] Thickness of the layer 1.…”

Section: Structure and Device Simulation By Scaps 1d Softwarementioning

confidence: 99%

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2024

Energy Tech

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Designing effective strategies for mitigating energy crisis highlights a research gap in current solar cell technologies. This study explores the inherent physicochemical properties of thin films composed of copper gallium sulfide telluride (CuGa1−xCrx(S,Te)2) with chromium substitution, prepared through the chemical spray pyrolysis technique. The investigation showcases how the concept of intermediate band structuring contributes to enhancing solar cell efficiency. This enhancement can be attributed to the remarkable mobility (from 1.80 to 5.48 cm2 V−1 s−1) and conductivity (from 1.00 to 6.06 S cm−1) exhibited by pure and 0.1 chromium thin films, respectively. Notably, the Cr‐0.1‐substituted CGST film displays maximum photoresponsivity of 0.624 AW−1, an external quantum efficiency of 145%, and a detectivity of 2.37E10. The fabricated solar cell is subjected to theoretical simulation using solar cell capacitance simulator‐1D software, revealing an upward trend in efficiency from 7.13% to 11.23% with increasing Cr substitution from 0.025 to 0.1. This efficiency improvement can be ascribed to the reduction in bandgap (from 2.40 to 1.72 eV) and the creation of a sub‐band in CGST due to Cr incorporation, as substantiated by UV–vis and NIR spectroscopy. These outcomes suggest that Cr‐0.1‐substituted CGST holds promise as a potential thin film absorber material in solar photovoltaics.

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Section: Structure and Device Simulation By Scaps 1d Softwarementioning

confidence: 99%

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2024

Energy Tech

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“…The Al–ZnO is a potential n-type semiconductor with excellent electrical properties and remarkable features such as high transparency and an optical bandgap of 3.33 eV. 28…”

Section: Structure and Device Simulation By Scaps 1d Softwarementioning

confidence: 99%

“…Parameters for the simulation of CG 1Àx V x ST/In 2 S 3 /AZO heterojunction solar cell structures[28][29][30][31] …”

mentioning

confidence: 99%

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2023

New J. Chem.

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Loss mechanisms in CZTS and CZTSe Kesterite thin-film solar cells: Understanding the complexity of defect density

et al. 2021

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Performance of CZTSxSe1−x solar cell with various mole fractions of sulfur for different buffer layers

Cited by 5 publications

References 9 publications

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Loss mechanisms in CZTS and CZTSe Kesterite thin-film solar cells: Understanding the complexity of defect density

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